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STP26NM60N

N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP26NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP26NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP26NM60ND

Lowinputcapacitanceandgatecharge

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW26NM60

N-CHANNEL600V-0.125ohm-26ATO-247Zener-ProtectedMDmeshTMPowerMOSFET

DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW26NM60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW26NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW26NM60N

N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW26NM60ND

Lowinputcapacitanceandgatecharge

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW26NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    STF26NM60N

  • 功能描述：

    MOSFET N-channel 600 V 20 A Mdmesh

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST/意法
24+
TO-247
20000
熱賣優(yōu)勢現(xiàn)貨
 詢價
ST
24+/25+
TO220F
6000
100%原裝正品真實庫存,支持實單
 詢價
STM
15+
原廠原裝
6000
進口原裝現(xiàn)貨假一賠十
 詢價
ST
2020+
原廠原裝正品
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ST
2021+
原廠原封裝
93628
原裝進口現(xiàn)貨 假一罰百
 詢價
ST
21+
TO-220F
1000
原裝優(yōu)勢現(xiàn)貨 歡迎咨詢
 詢價
ST
2046+
TO220F
5000
全新原裝公司現(xiàn)貨
詢價
ST
23+
TO220F
6996
只做原裝正品現(xiàn)貨
 詢價
ST/意法
24+
TO-220F
2443
只做原廠渠道 可追溯貨源
 詢價
ST
21+
TO-220F
6880
只做原裝,質(zhì)量保證
 詢價
更多STF26NM60N供應(yīng)商 更新時間2025-3-28 18:23:00

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