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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
STF8NM60ND	文件：727.53 Kbytes Page：17 Pages	N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF8NM60ND	文件：310.85 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP8NM60	文件：558.91 Kbytes Page：18 Pages	N-channel650V@Tjmax,0.9Ω,8AMDmesh?PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60	文件：319.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=8A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapplic	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP8NM60	文件：489.18 Kbytes Page：16 Pages	N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60	文件：603.7 Kbytes Page：13 Pages	N-CHANNEL600V-0.9ohm-8ATO-220/TO-220FP/DPAK/IPAKMDmesh??PowerMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60	文件：561.24 Kbytes Page：18 Pages	N-channel650V@Tjmax,0.9廓,8AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60D	文件：735.3 Kbytes Page：13 Pages	N-CHANNEL600V-0.9廓-8A-TO-220/D2PAKFastDiodeMDmesh??PowerMOSFET Description TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters Generalfeatures ■Highdv/dtandavalanchecapabilities	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60D	文件：1.10919 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
STP8NM60D	文件：371.42 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP8NM60FP	文件：558.91 Kbytes Page：18 Pages	N-channel650V@Tjmax,0.9Ω,8AMDmesh?PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60FP	文件：311.01 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=8A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapplic	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP8NM60FP	文件：561.24 Kbytes Page：18 Pages	N-channel650V@Tjmax,0.9廓,8AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60FP	文件：489.18 Kbytes Page：16 Pages	N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60FP	文件：603.7 Kbytes Page：13 Pages	N-CHANNEL600V-0.9ohm-8ATO-220/TO-220FP/DPAK/IPAKMDmesh??PowerMOSFET Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60N	文件：492.5 Kbytes Page：17 Pages	N-channel600V-0.56廓-7A-TO-220-TO-220FP-IPAK-DPAKsecondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60N	文件：706.65 Kbytes Page：19 Pages	N-channel600V,0.56廓,7AMDmesh??IIPowerMOSFETTO-220,TO-220FP,IPAK,DPAK,D2PAK	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP8NM60N	文件：372.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP8NM60ND	文件：1.10767 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
STP8NM60ND	文件：727.53 Kbytes Page：17 Pages	N-channel600V,0.59,7A,FDmeshIIPowerMOSFET Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

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詳細(xì)參數(shù)

型號(hào)：
STF8NM60ND
功能描述：
MOSFET NCH 6V 7A FDMESH FDMesh
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市卓越微芯電子有限公司	STF8NM60ND	ST	2020+	TO220F	18600	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市安博威科技有限公司	STF8NM60ND	STM	21+	TO-220FP-3	1700	原裝正品有掛有貨	詢價(jià)
深圳市華高宇電子有限公司	STF8NM60ND	STM	19+		700	TO-220FP-3	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	STF8NM60ND	STM	23+	TO-220FP-3	700	原裝現(xiàn)貨支持送檢	詢價(jià)
深圳市河鋒鑫科技有限公司	STF8NM60ND	ST/意法	17+	TO-220FP	31518	原裝正品可含稅交易	詢價(jià)
深圳市高捷芯城科技有限公司	STF8NM60ND	ST(意法半導(dǎo)體)	23+	TO-220F	7828	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	STF8NM60ND	ST/進(jìn)口原	17+	TO-220F	6200		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	STF8NM60ND	ST	2016+	TO-220F	6523	只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十!	詢價(jià)
深圳市凌旭科技有限公司	STF8NM60ND	ST	2016+	TO-220F	2980	公司只做原裝,假一罰十,可開17%增值稅發(fā)票!	詢價(jià)
深圳市賽芯源科技有限公司	STF8NM60ND	ST	18+	TO-220F	41200	原裝正品,現(xiàn)貨特價(jià)	詢價(jià)

更多STF8NM60ND供應(yīng)商更新時(shí)間2024-12-28 8:22:00

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