STGB15M65DF2_V01中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Features

? 6 μs of short-circuit withstand time

? VCE(sat) = 1.55 V (typ.) @ IC = 15 A

? Tight parameter distribution

? Safer paralleling

? Positive VCE(sat) temperature coefficient

? Low thermal resistance

? Soft and very fast recovery antiparallel diode

? Maximum junction temperature: TJ = 175 °C

Applications

? Motor control

? UPS

? PFC

? General purpose inverter