STGSB200M65DF2AG中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Features

? AEC-Q101 qualified

? 6 μs of minimum short-circuit withstand time

? VCE(sat) = 1.65 V (typ.) @ IC = 200 A

? Tight parameter distribution

? Positive VCE(sat) temperature coefficient

? Low thermal resistance

? Maximum junction temperature: TJ = 175 °C

? Dice on direct bond copper (DBC) substrate

? Isolation rating of 3400 Vrms/min

? UL recognition: UL 1557 file E81734

Applications

? Traction inverter

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting

power package offers a low thermal resistance coupled with a electrical isolated top

side thermal pad.