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7N90

900VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N90isanN-channelmodePowerFETusingUTC’sadvancedtechnologytoprovidecostumerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulsei

UTCUnisonic Technologies

友順友順科技股份有限公司

7N90

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

7N90

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

7N90

7A,900VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

7N90A

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA7N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA7N90M

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA7N90M

900VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF7N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXFH7N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH7N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH7N90Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH7N90Q

HiPerFETTMPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitch

IXYS

IXYS Corporation

IXFM7N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT7N90Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFT7N90Q

HiPerFETTMPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitch

IXYS

IXYS Corporation

SSF7N90A

N-CHANNELPOWERMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSH7N90A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSH7N90A

N-CHANNELPOWERMOSFET

N-CHANNELPOWERMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:25μA(Max.)@VDS=900V ?LowerRDS(ON):1.247?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SW7N90

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN. ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETis

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    STH7N90FI

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4.5A I(D) | TO-218VAR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
N/A
3190
詢價(jià)
ST
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價(jià)
ST
05+
TO-247
2000
原裝進(jìn)口
 詢價(jià)
ST
2020+
TO-3P
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價(jià)
ST
24+
TO-3P
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
ST
TO-3P
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
ST/意法
23+
TO
10000
公司只做原裝正品
 詢價(jià)
ST
TO
22+
6000
十年配單,只做原裝
 詢價(jià)
ST
22+
TO
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
ST/意法
24+
TO3PF
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價(jià)
更多STH7N90FI供應(yīng)商 更新時(shí)間2024-10-24 10:20:00

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