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FQA7N90

900V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA7N90M

900V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA7N90M

900V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA7N90M_06

900V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA7N90M_F109

900V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQAF7N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IXFH7N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH7N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH7N90Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH7N90Q

HiPerFETTMPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitch

IXYS

IXYS Corporation

IXFM7N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT7N90Q

HiPerFETTMPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitch

IXYS

IXYS Corporation

IXFT7N90Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

SSF7N90A

N-CHANNELPOWERMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SSH7N90A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SSH7N90A

N-CHANNELPOWERMOSFET

N-CHANNELPOWERMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:25μA(Max.)@VDS=900V ?LowerRDS(ON):1.247?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SW7N90

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN. ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETis

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWF7N90

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN. ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETis

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

TSM7N90

900VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM7N90

900VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

詳細參數(shù)

  • 型號：

    FQA7N90

  • 功能描述：

    MOSFET 900V N-Channel QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-3P
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FAIRCHILD
N/A
主營模塊
190
原裝正品,現(xiàn)貨供應
 詢價
FAIRCHILD
24+
TO-3PN
8866
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢
 詢價
FSC/ON
23+
原包裝原封 □□
1239
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
 詢價
23+
TO-3P
65480
詢價
FCS
2020+
TO-3P
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
FAIRCHILD/仙童
2022+
50
全新原裝 貨期兩周
 詢價
FAIRC
2020+
TO-3P
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
更多FQA7N90供應商 更新時間2024-12-22 16:12:00

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