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首頁 >FQAF12N60>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQAF12N60	文件：539.05 Kbytes Page：8 Pages	600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQAF12N60	文件：421.79 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=7.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQB12N60	文件：540.78 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB12N60	文件：333.51 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQB12N60C	文件：642.37 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB12N60C	文件：828.96 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB12N60CTM	文件：828.96 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI12N60	文件：540.78 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI12N60C	文件：642.37 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI12N60C	文件：828.96 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP12N60	文件：65.36 Kbytes Page：1 Pages	600VN-ChannelMOSFET DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	TGS Tiger Electronic Co.,Ltd	TGS
FQP12N60	文件：532.52 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP12N60	文件：302.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQP12N60C	文件：873.99 Kbytes Page：10 Pages	FQP12N60C/FQPF12N60C Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP12N60C	文件：1.43803 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP12N60C	文件：1.07433 Mbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQP12N60C	文件：1.12119 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF12N60	文件：1.43803 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF12N60	文件：549.59 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF12N60C	文件：873.99 Kbytes Page：10 Pages	FQP12N60C/FQPF12N60C Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild

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詳細參數(shù)

型號：
FQAF12N60
功能描述：
MOSFET 600V N-Channel QFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市星佑電子有限公司	FQAF12N60	仙童	06+	TO-247F	800	原裝庫存	詢價
深圳市永貝爾科技有限公司	FQAF12N60	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
瀚佳科技(深圳)有限公司	FQAF12N60	FAIRC	2020+	TO-3PF	16800	絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?	詢價
深圳市科雨電子有限公司	FQAF12N60	ON	1503+	TO-3P	3000	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市國宇半導體科技有限公司	FQAF12N60	FAIRCHILD仙童	23+	TO-3PF	10000	公司只做原裝正品	詢價
深圳市威爾健半導體有限公司	FQAF12N60	FAIRCHILD/仙童	23+	TO-247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市河鋒鑫科技有限公司	FQAF12N60	Fairchild/ON	22+	SC94	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳廊盛科技有限公司	FQAF12N60	FAIRCHILD/仙童	2022	TO-247	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
深圳市匯萊威科技有限公司	FQAF12N60		仙童	TO-247	68900	原包原標簽100%進口原裝常備現(xiàn)貨!	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	FQAF12N60	FAIRCHILD/仙童	23+		955499	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價

更多FQAF12N60供應商更新時間2024-12-22 9:16:00

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