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首頁 >FQAF19N20>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQAF19N20	文件：699.18 Kbytes Page：8 Pages	200V N-Channel MOSFET 200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQAF19N20	文件：421.37 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQAF19N20L	文件：723.29 Kbytes Page：8 Pages	200V LOGIC N-Channel MOSFET 200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB19N20	文件：333.57 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=19.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQB19N20	文件：808.16 Kbytes Page：9 Pages	N-ChannelQFETMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB19N20	文件：723.58 Kbytes Page：9 Pages	200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB19N20C	文件：876.65 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB19N20L	文件：868.47 Kbytes Page：8 Pages	N-ChannelQFET?MOSFET200V,21A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB19N20L	文件：749.74 Kbytes Page：9 Pages	200VLOGICN_ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB19N20L	文件：264.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQB19N20LTM	文件：868.47 Kbytes Page：8 Pages	N-ChannelQFET?MOSFET200V,21A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI19N20	文件：808.16 Kbytes Page：9 Pages	N-ChannelQFETMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI19N20	文件：723.58 Kbytes Page：9 Pages	200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI19N20C	文件：876.65 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI19N20L	文件：749.74 Kbytes Page：9 Pages	200VLOGICN_ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP19N20	文件：302.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=19.4A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQP19N20	文件：705.94 Kbytes Page：8 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP19N20C	文件：1.1444 Mbytes Page：10 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP19N20L	文件：734.59 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF19N20	文件：278.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC

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詳細參數(shù)

型號：
FQAF19N20
功能描述：
MOSFET 200V N-Channel QFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市高捷芯城科技有限公司	FQAF19N20	onsemi(安森美)	23+	TO-3PF	8046	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價
深圳市一線半導體有限公司	FQAF19N20	FAIRCHILD	24+	TO-247TO-3PTO-3PF	8866		詢價
深圳市星佑電子有限公司	FQAF19N20	仙童	06+	TO-247F	800	原裝庫存	詢價
深圳市永貝爾科技有限公司	FQAF19N20	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市鼎盛源芯科技有限公司	FQAF19N20	harris	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢	詢價
深圳市正邁科技有限公司	FQAF19N20	FSC/ON	23+	原包裝原封 □□	1018	原裝進口特價供應 QQ 1304306553 更多詳細咨詢庫存	詢價
深圳市納艾斯科技有限公司	FQAF19N20	FAIRCHI	2020+	TO-3PF	80000	只做自己庫存,全新原裝進口正品假一賠百,可開13%增	詢價
瀚佳科技(深圳)有限公司	FQAF19N20	FAIRC	2020+	TO-3PF	16800	絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?	詢價
深圳市仟禧電子有限公司	FQAF19N20	FAIRCHILD/仙童	22+	TO-3P	20000	保證原裝正品,假一陪十	詢價
深圳市航潤創(chuàng)能電子集團有限公司	FQAF19N20	FSC	21+	TO-3PF	286	原裝現(xiàn)貨假一賠十	詢價

更多FQAF19N20供應商更新時間2024-11-8 17:54:00

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