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FQAF10N80

800V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FTK10N80DD

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

FTK10N80F

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

FTK10N80P

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

FTK10N80PD

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

HFH10N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFP10N80

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFS10N80

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HLDF10N80

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDF10N80

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HM10N80A

siliconN-channelEnhanced

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM10N80F

siliconN-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS10N80F

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS10N80K

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFA10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFA10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFA10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFH10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    FQAF10N80

  • 功能描述:

    MOSFET 800V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD/仙童
17+
TO-247TO-3PTO-3PF
31518
原裝正品 可含稅交易
詢價(jià)
onsemi(安森美)
23+
TO-3PF
8046
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價(jià)
FAIRCHILD
24+
TO-247TO-3PTO-3PF
8866
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來電咨詢
詢價(jià)
FSC/ON
23+
原包裝原封 □□
7549
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫存
詢價(jià)
FAIRCHILD/仙童
2022+
41
全新原裝 貨期兩周
詢價(jià)
FAIRC
2020+
TO-3PF
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
ON
1503+
TO-3P
3000
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
詢價(jià)
FAIRCHILD/仙童
23+
TO-3PF
10000
公司只做原裝正品
詢價(jià)
更多FQAF10N80供應(yīng)商 更新時(shí)間2024-12-22 14:00:00