零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FTK10N80F | 10.0 Amps, 800 Volts N-Channel MO S-FET | FS First Silicon Co., Ltd | FS | |
10.0Amps,800VoltsN-ChannelMOS-FET | FS First Silicon Co., Ltd | FS | ||
10.0Amps,800VoltsN-ChannelMOS-FET | FS First Silicon Co., Ltd | FS | ||
800VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-ChannelEnhancementModePowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelEnhancementModePowerMOSFET | HUILIDAShenzhen hui lida electronic co., LTD 匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司 | HUILIDA | ||
siliconN-channelEnhanced | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
siliconN-channelEnhancedVDMOSFETs | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelSuperJunctionMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelSuperJunctionMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
PolarHVHiPerFETPowerMOSFET PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHVHiPerFETPowerMOSFET PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V APPLICATIONS ·Switching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FIRSTSILICON |
23+ |
DFN22 |
200924 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
FS |
23+ |
SOT-23 |
63000 |
原裝正品現(xiàn)貨 |
詢價 | ||
FS |
23+ |
12000 |
詢價 | ||||
FIRSTSILICON |
24+ |
ROHS |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FIRSTSILICON |
22+ |
SOT-323 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
FIRSTSILICON |
2022+ |
2000 |
全新原裝 貨期兩周 |
詢價 | |||
FS |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
Nippon |
90 |
公司優(yōu)勢庫存 熱賣中!! |
詢價 | ||||
FIRSTSILICON |
23+ |
SOT-23 |
50000 |
原裝正品 支持實單 |
詢價 |
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