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FTK10N80DD

10.0 Amps, 800 Volts N-Channel MO S-FET

FS

First Silicon Co., Ltd

FTK10N80F

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

FTK10N80P

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

FTK10N80PD

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

HFH10N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFP10N80

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFS10N80

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HLDF10N80

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDF10N80

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HM10N80A

siliconN-channelEnhanced

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM10N80F

siliconN-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS10N80F

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS10N80K

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFA10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFA10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFA10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFH10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFP10N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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FIRSTSILICON
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200924
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FS
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63000
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FS
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FIRSTSILICON
24+
ROHS
990000
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FIRSTSILICON
22+
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9600
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FIRSTSILICON
2022+
2000
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FS
NA
8560
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Nippon
90
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FIRSTSILICON
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更多FTK10N80DD供應(yīng)商 更新時(shí)間2024-12-22 11:10:00

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