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STI30NM60ND

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STI32N65M5

Marking:I2PAK;Package:TO-262;isc N-Channel MOSFET Transistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=22A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=148mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STI32N65M5

N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D?PAK, I?PAK, TO-220FP, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STI33N60M6

N-channel 600 V, 105 m typ., 25 A, MDmesh M6 Power MOSFET in an I2PAK package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STI34N65M5

Marking:34N65M5;Package:I2PAK;N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ?WorldwidebestRDS(on)*area ?HigherVDSSratingandhighdv/dtcapability ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STI34N65M5

Marking:I2PAK;Package:TO-262;isc N-Channel MOSFET Transistor

FEATURES ?DrainCurrent–ID=28A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapp

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STI3508

28V High Efficiency 1MHz, 2A Step Up Regulator

FEATURES ?Integrated80mΩPowerMOSFET ?2Vto24VInputVoltage ?1MHzFixedSwitchingFrequency ?Internal4ASwitchCurrentLimit ?AdjustableOutputVoltage ?InternalCompensation ?Upto28VOutputVoltage ?AutomaticPulseFrequencyModulation ?ModeatLightLoads ?upto97Eff

ETCList of Unclassifed Manufacturers

未分類制造商

STI35N65M5

Marking:I2PAK;Package:TO-262;isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-262(I2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STI35N65M5

N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D?PAK, TO-220FP, I?PAK, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STI410N4F7AG

Marking:410N4F7;Package:I2PAK;Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET? F7 Power MOSFET in an I2PAK package

Features ?Designedforautomotiveapplications ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizes STripFE

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

晶體管資料

  • 型號:

    STI10

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

  • 封裝形式:

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

  • 可代換的型號:

    3DG84D,

  • 最大耗散功率:

    1W

  • 放大倍數(shù):

  • 圖片代號:

    NO

  • vtest:

    100

  • htest:

    999900

  • atest:

    1

  • wtest:

    1

產(chǎn)品屬性

  • 產(chǎn)品編號:

    STI

  • 制造商:

    Eaton - Electronics Division

  • 類別:

    電路保護 > 配件

  • 系列:

    HTB

  • 包裝:

    散裝

  • 配件類型:

    旋鈕

  • 配套使用/相關產(chǎn)品:

    HTB 系列

  • 描述:

    FUSE KNOB ASSEMBLY

供應商型號品牌批號封裝庫存備注價格
Eaton
22+
NA
168
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詢價
STM/意法半導體
0014
VIDEOIC/STI3520/Leaded/T
960
原裝香港現(xiàn)貨真實庫存。低價
詢價
ST
24+
QFP-208
20000
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??!
詢價
ST
23+
QFP80
3100
絕對現(xiàn)貨庫存
詢價
ST
1650+
?
7500
只做原裝進口,假一罰十
詢價
最新
2000
原裝正品現(xiàn)貨
詢價
ST
24+
QFP
35200
一級代理/放心采購
詢價
STEMENS
24+
BGA
6868
原裝現(xiàn)貨,可開13%稅票
詢價
ST/意法
11+
BGA
130
原裝/現(xiàn)貨
詢價
SUNTO
24+
SOT23-5
1837
進口原裝正品優(yōu)勢供應
詢價
更多STI供應商 更新時間2025-4-22 10:08:00