| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Extremely low gate charge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh? M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：300N4F6；Package：I2PAK；N-channel 40 V, 1.7 m廓 typ., 160 A, STripFET??VI DeepGATE??Power MOSFET in a I?PAK package Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET?DeepGATE?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ■StandardlevelVGS(th) ■100avalancherated Applications ■ | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=22A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=139mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Marking：30N65M5；Package：I2PAK；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D?PAK, TO-220FP, I?PAK, TO-220, TO-247 Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.115Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode) Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
- 封裝形式：
- 極限工作電壓：
100V
- 最大電流允許值：
1A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
- 可代換的型號：
3DG84D,
- 最大耗散功率：
1W
- 放大倍數(shù)：
- 圖片代號：
NO
- vtest：
100
- htest：
999900
- atest：
1
- wtest：
1
產(chǎn)品屬性
- 產(chǎn)品編號：
STI
- 制造商：
Eaton - Electronics Division
- 類別：
電路保護(hù) > 配件
- 系列：
HTB
- 包裝：
散裝
- 配件類型：
旋鈕
- 配套使用/相關(guān)產(chǎn)品：
HTB 系列
- 描述：
FUSE KNOB ASSEMBLY
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Eaton |
22+ |
NA |
168 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
STM |
24+ |
QFP208 |
6232 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) | ||
ST |
24+/25+ |
30 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
ST |
23+ |
BGA |
3260 |
絕對全新原裝!優(yōu)勢供貨渠道!特價(jià)!請放心訂購! |
詢價(jià) | ||
DantonaIndustries-Inc. |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) | |||
STEMENS |
24+ |
BGA |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
ST |
24+ |
QFP |
30617 |
ST一級地代理商原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ST |
24+ |
QFP |
1 |
本站現(xiàn)庫存 |
詢價(jià) | ||
ST/OMEGA |
23+ |
QFP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ST |
24+ |
QFP-208 |
4650 |
詢價(jià) |
