STI300N4F6

Marking：300N4F6；Package：I2PAK；N-channel 40 V, 1.7 m廓 typ., 160 A, STripFET??VI DeepGATE??Power MOSFET in a I?PAK package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET?DeepGATE?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ■StandardlevelVGS(th) ■100avalancherated Applications ■

STI30N65M5

isc N-Channel MOSFET Transistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=22A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=139mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre

STI30N65M5

Marking：30N65M5；Package：I2PAK；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D?PAK, TO-220FP, I?PAK, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STI30NM50N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.115Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STI30NM60ND

N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)

Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody

STI30NM60ND

N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody

STI30NM60ND

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STI30NM50N

N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

STI30NM60N

N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK