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MTD9N10D

POWERMOSFET9AMPS,100VOLTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD9N10E

POWERMOSFET9AMPS,100VOLTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD9N10E

TMOSPOWERFET9.0AMPERES100VOLTSRDS(on)=0.25OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD9N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PJD9N10A

100VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@4.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJD9N10A

100VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

STD9N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD9N10

N-CHANNEL100V-0.23ohm-9ADPAK/IPAKPOWERMOSTRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD9N10L

N-CHANNEL100V-0.22ohm-9AIPAK/DPAKPOWERMOSTRANSISTOR

N-CHANNEL100V-0.22?-9AIPAK/DPAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.22? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SW9N10V

N-channelEnhancedmodeTO-252MOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

T9N10E

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
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2540
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C&K
20+
開關(guān)元件
7896
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BARACODA
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3050
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C&K
23+
6000
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Amulet Technologies LLC
22+
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12
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ST
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7566
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ST
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36900
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