STL51005G

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1300nmLaserinCoaxialPackagewithSM-Pigtail,LowPower ?Designedforapplicationinfiber-opticnetworks ?LaserdiodewithMulti-QuantumWellstructure ?Suitableforbitratesupto1Gbit/s ?Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower ?Hermetically

STL51007X

1300 nm Laser in Receptacle Package, Low Power

1300nmLaserinReceptaclePackage,LowPower ?Designedforapplicationinfiber-opticnetworks ?LaserdiodewithMulti-QuantumWellstructure ?Suitableforbitratesupto1Gbit/s ?Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower ?Hermeticallysealedsubco

STL52DN4LF7AG

Automotive-grade dual N-channel 40 V, 9 mΩ typ., 18 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 DI

Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness ?Wettableflankpackage Description ThisN-channelPowerMOSFETutilizes STripFET?F7technologywithanenhanced

STL57N65M5

N-channel 650 V, 0.061 廓 typ., 22.5 A MDmesh??V Power MOSFET in a PowerFLAT??8x8 HV package

Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam

STL58N3LLH5

Marking：58N3LH5；Package：PowerFLAT；Automotive-grade N-channel 30 V, 0.0076 ??typ., 56 A STripFET??H5 Power MOSFET in a PowerFLAT??5x6 package

Description ThisdeviceisanN-channelPowerMOSFET developedusingSTMicroelectronics’STripFET? H5technology.Thedevicehasbeenoptimizedto achieveverylowon-stateresistance,contributing toaFoMthatisamongthebestinitsclass. Features ?Designedforautomotiveapplicatio

STL5NK65Z

N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT??Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STL60N10F7

Marking：60N10F7；Package：PowerFLAT；N-channel 100 V, 0.0145 ??typ., 12 A, STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

Description ThisdeviceisanN-channelPowerMOSFET developedusingthe7thgenerationofSTripFET? DeepGATE?technology,withanewgate structure.TheresultingPowerMOSFETexhibits thelowestRDS(on)inallpackages. Features ?Ultralowon-resistance ?100avalanchetested Appli

STL60N32N3LL

Marking：60N32N3LL；Package：PowerFLAT；Dual N-channel 30 V, 0.005 廓, 15 A PowerFLAT??5x6 asymmetrical double island, STripFET??Power MOSFET

Description ThisdeviceisadualN-channelPowerMOSFET whichutilizesthelatestgenerationofdesignrules forST'sproprietarySTripFET?Vand STripFET?VIDeepGATE?technology.The lowestavailableRDS(on)*Qginthischipscale packagerendersthedevicesuitableforthemost demandin

STL60N3LLH5

Marking：60N3LLH5；Package：PowerFLAT；N-channel 30 V, 0.0063 ?? 17 A PowerFLAT??(5x6) STripFET??V Power MOSFET

Description ThisSTripFET?VPowerMOSFETtechnologyisamongthelatestimprovements,whichhavebeenespeciallytailoredtoachieveverylowon-stateresistanceprovidingalsooneofthebest-in-classfigureofmerit(FOM). Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resista

STL60P4LLF6

Marking：60P4LLF6；Package：PowerFLA；P-channel 40 V, 0.0115 廓 typ.,60 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?F6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?