STL260N4F7

Marking：260N4F7；Package：PowerFLAT；N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

STL26N65DM2

N-channel 650 V, 0.182 typ., 20 A, MDmeshTM DM2 Power MOSFET in a PowerFLAT? 8x8 HV package

Features ?Fast-recoverybodydiode ?Extremelylowgatechargeandinputcapacitance ?Lowon-resistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmesh?DM2fastrecovery diodeseries.

STL26NM60N

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam

STL27N15

Marking：L27N15；Package：PowerFLAT；N-CHANNEL 150V - 0.045 W - 27A PowerFLAT LOW GATE CHARGE STripFET MOSFET

■TYPICALRDS(on)=0.045? ■IMPROVEDDIE-TO-FOOTPRINTRATIO ■VERYLOWPROFILEPACKAGE(1mmMAX) ■VERYLOWTHERMALRESISTANCE ■VERYLOWGATECHARGE DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronics uniqueSTripFET?processhasspecificallybeen designedtominimizeinpu

STL285N4F7AG

Marking：285N4F7；Package：PowerFLAT；Automotive-grade N-channel 40 V, 0.9 mΩ typ., 120 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ?DesignedforautomotiveapplicationsandAEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness ?Wettableflankpackage Applications ?Switchingapplications Descripti

STL28N60DM2

N-channel 600 V, 0.155 typ., 21 A MDmeshTM DM2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ?Fast-recoverybodydiode ?Extremelylowgatechargeandinput capacitance ?Lowon-resistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh?DM2fastrecoverydiode seri

STL28N60M2

N-channel 600 V, 0.140 typ., 19 A MDmeshTM M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh?M2technology. Thankstoitsstriplayoutandanimprovedvertical structure,thedevi

STL28NF3LL

N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“STripFET?”technology.Theresultingtransistorshowsextremelylowon-resistanceandminimalgatecharge.ThenewPowerFLAT?packageallowsasignificantreductioninboardspacewithoutcompromisingperformance

STL300N4LF8

Marking：300N4LF8；N-channel logic level 40 V, 1.0 mΩ max., 304 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features ?MSL1grade ?175°Cmaximumoperatingjunctiontemperature ?100%avalanchetested ?LowgatechargeQg Applications ?Industrialtools,motordrivesandequipment ?Industrialmotorcontrol ?Powersuppliesandconverters Description TheSTL300N4LF8isa40VN-channe

STL305N4LF8AG

Automotive N?channel logic level 40 V, 1.0 m? max., 304 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features ?AEC-Q101qualified ?MSL1grade ?175°Cmaximumoperatingjunctiontemperature ?100%avalanchetested ?LowgatechargeQg ?Wettableflankpackage Applications ?Automotivemotorcontrol ?Bodyandconvenience ?Chassisandsafety ?PowertrainforICE Description