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STP30N65M5

N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D?PAK, TO-220FP, I?PAK, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP30N65M5

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB30N65M5

N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD?PAK,TO-220FP,I?PAK,TO-220,TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB30N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF30N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF30N65M5

N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD?PAK,TO-220FP,I?PAK,TO-220,TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STI30N65M5

N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD?PAK,TO-220FP,I?PAK,TO-220,TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STI30N65M5

iscN-ChannelMOSFETTransistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=22A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=139mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW30N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW30N65M5

N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD?PAK,TO-220FP,I?PAK,TO-220,TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號:

    STP30N65M5

  • 功能描述:

    MOSFET N-channel 650 V MDMesh

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST/意法半導(dǎo)體
22+
TO-220-3
6001
原裝正品現(xiàn)貨 可開增值稅發(fā)票
詢價
STMicroelectronics
23+
TO-220
6000
15年原裝正品企業(yè)
詢價
ST
24+
原廠原封
6523
進口原裝公司百分百現(xiàn)貨可出樣品
詢價
STMicro.
23+
TO-220
7750
全新原裝優(yōu)勢
詢價
ST原裝
22+23+
TO-220
23589
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
ST原裝
19+
TO-220
9860
一級代理
詢價
STM原廠目錄
24+
TO-220
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
詢價
ST
2021+
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
ST/意法
21+
TO-220
5000
優(yōu)勢供應(yīng) 實單必成 可開增值稅13點
詢價
STM
1809+
TO-220
326
就找我吧!--邀您體驗愉快問購元件!
詢價
更多STP30N65M5供應(yīng)商 更新時間2024-12-23 8:30:00