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STW30N65M5

Marking：30N65M5；Package：TO-247；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D?PAK, TO-220FP, I?PAK, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW30N65M5

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB30N65M5

N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD?PAK,TO-220FP,I?PAK,TO-220,TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB30N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF30N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF30N65M5

N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD?PAK,TO-220FP,I?PAK,TO-220,TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI30N65M5

N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD?PAK,TO-220FP,I?PAK,TO-220,TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI30N65M5

iscN-ChannelMOSFETTransistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=22A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=139mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP30N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP30N65M5

N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD?PAK,TO-220FP,I?PAK,TO-220,TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    STW30N65M5

  • 功能描述：

    MOSFET POWER MOSFET N-CH 650V 22 A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
STM
21+
TO-247-3
1800
原裝正品 有掛有貨
 詢價
STM
21+
1800
TO-247-3
 詢價
ST
23+
TO247
3600
原裝正品!假一罰十!
 詢價
ST/意法半導(dǎo)體
22+
TO-247-3
6002
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
STM
23+
TO-247-3
1800
原裝現(xiàn)貨支持送檢
 詢價
ST/意法半導(dǎo)體
2023
TO-247-3
6000
公司原裝現(xiàn)貨/支持實單
 詢價
ST(意法半導(dǎo)體)
23+
TO-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
AO/萬代
23+
TO-220
69820
終端可以免費供樣,支持BOM配單!
 詢價
更多STW30N65M5供應(yīng)商 更新時間2025-2-7 14:02:00

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