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STP45N10

N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR

N-CHANNEL100V-0.027?-45A-TO-220/TO-220FIPowerMOSTransistor ■TYPICALRDS(on)=0.027? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARAC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP45N10F7

Isc N-Channel MOSFET Transistor

?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤18m? ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP45N10F7

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features ?AmongthelowestRDS(on)on

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP45N10FI

N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR

N-CHANNEL100V-0.027?-45A-TO-220/TO-220FIPowerMOSTransistor ■TYPICALRDS(on)=0.027? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARAC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP45N10F7

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

45N10

N-Channel100-V(D-S)MOSFET

FEATURES TrenchFET??PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100%RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEB45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,44A,RDS(ON)=39mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

MTW45N10E

TMOSPOWERFET45AMPERES100VOLTSRDS(on)=0.035OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafas

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    STP45N10

  • 功能描述：

    MOSFET REORD 511-STP50NE10 TO-220 N-CH 100V 45A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
24+
N/A
2140
詢價
ST
17+
TO-220
6200
詢價
STMICROELEC
24+
原廠封裝
9861
原裝現(xiàn)貨假一罰十
 詢價
ST
24+
TO-220
2500
原裝現(xiàn)貨熱賣
 詢價
ST
06+
TO-220
10000
自己公司全新庫存絕對有貨
 詢價
ST
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
ST
23+
TO-220
8795
詢價
ST
2020+
TO-220
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
ST
23+
TO-220
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ST全系列
22+23+
TO-220
26298
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
更多STP45N10供應(yīng)商 更新時間2025-2-24 16:00:00

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