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STP6NC80Z

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP6NC80ZFP

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

P6NC80

N-CHANNEL800V-1.5ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB6NC80

N-CHANNEL800V-1.5ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB6NC80Z

N-CHANNEL800V-1.5ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號：

    STP6NC80Z

  • 功能描述：

    MOSFET TO-220AB

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
TO-220
9896
詢價
ST
24+
TO-220
12500
原裝現(xiàn)貨熱賣
 詢價
ST
17+
TO-220
6200
詢價
ST
24+
T0-220
6945
詢價
ST
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
ST
23+
TO-220
10000
專做原裝正品,假一罰百!
 詢價
ST
23+
TO-220
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
ST
21+
TO-220
448
原裝現(xiàn)貨假一賠十
 詢價
ST/意法
23+
TO-220
10000
公司只做原裝正品
 詢價
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多STP6NC80Z供應(yīng)商 更新時間2024-12-24 9:57:00

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