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STS

Ultraminiature Tactile Switch

BournsBourns Electronic Solutions

伯恩斯

STS

Wire Marker type-On sheets

3M

3M Electronics

STS

Surface Mount Process Sealed Tactile

CIT

CIT Relay & Switch

STS

包裝：盒 類別：電纜，電線 - 管理 標記物 描述：WIRE MARKER 19.1MM X 35.6MM WHT

3M

3M Electronics

STS011

THERMOSTAT SWITCH

>Thumbwheelsettingdial >Smallhysteresis >Highswitchingcapacity >Antifrostassurance >Optimizedhousingforbetterairflow

STEGO

STEGO Elektrotechnik GmbH

STS01DTP06

DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR

DESCRIPTION TheSTS01DTP06isaHybriddualNPN-PNPcomplementarypowerbipolartransistormanufacturedbyusingthelatestlowvoltageplanartechnology.TheSTS01DTP06ishousedindualislandSO-8packagewithseparatedterminalsforhigherassemblyflexibility,specificallyrecommendedtobe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STS100

Multifunction Telecommunications Switch

DESCRIPTION TheSTS100combinestwo1FormAsolidstaterelaysandoneoptocouplerina16-pinSOICpackage.ItssmalloutlineandlowheightmakeitidealforuseinPCMCIAapplicationswheremulti-functiondeviceshelpreducecostandboardspace. FEATURES ?Lowinputcontrolcurrent ?Func

SSOUSA

Solid State Optronic

STS10100S

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS ?Lowvoltage,high frequencyrectifier ?Freewheelingdiodes, polarityprotection applications FEATURES ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?Guardringforovervoltage protection，Highreliability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

STS10100S-RM-A

Marking：STD10100S；Package：TO-220MF-K1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS ?Highfrequencyswitch powersupply ?Freewheelingdiodes, polarityprotection applications FEATURES ?Commoncathodestructure ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?TrenchMOSSchottkytechnology， Highreliability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

STS10100S-RM-AR

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS ?Highfrequencyswitch powersupply ?Freewheelingdiodes, polarityprotection applications FEATURES ?Commoncathodestructure ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?TrenchMOSSchottkytechnology， Highreliability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

STS10100S-RM-AR

Marking：STS10100S；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS ?Lowvoltage,high frequencyrectifier ?Freewheelingdiodes, polarityprotection applications FEATURES ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?Guardringforovervoltage protection，Highreliability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

STS10100S-XG-A

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS ?Lowvoltage,high frequencyrectifier ?Freewheelingdiodes, polarityprotection applications FEATURES ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?Guardringforovervoltage protection，Highreliability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

STS10100S-XG-AR

Marking：STS10100S；Package：SMP-1；TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS ?Lowvoltage,high frequencyrectifier ?Freewheelingdiodes, polarityprotection applications FEATURES ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?Guardringforovervoltage protection，Highreliability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

STS10NF30L

N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique”SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STS10P4LLF6

Marking：10K4L；Package：SO-8；P-channel 40 V, 0.0125 廓 typ., 10 A, StripFET??F6 Power MOSFET in SO-8 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?F6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STS10PF30L

P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance. GeneralFeatures ■TYPICALRDS(on)=0.012? ■STANDARDOUTLINEFOREASYAUTOMATEDSU

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STS11NF30L

N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STS11NF3LL

N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION ThisapplicationspecificPowerMosfetisthethirdgenerationofSTMicroelectronicsunique”SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsthebesttrade-offbetweenon-resistanceandgatecharge.Whenusedashighandlowsideinbuckregulators,itgives

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STS126

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STS12NF30L

N - CHANNEL 30V - 0.0085W - 12A SO-8 STripFET POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

晶體管資料

  • 型號：

    STS103

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    低頻或音頻放大 （LF）_功率開關(guān) （PSW）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    80V

  • 最大電流允許值：

    15A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    2

  • 可代換的型號：

    3DK109C,

  • 最大耗散功率：

    125W

  • 放大倍數(shù)：

    β=20-50

  • 圖片代號：

    E-44

  • vtest：

    80

  • htest：

    999900

  • atest：

    15

  • wtest：

    125

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STS

  • 制造商：

    3M

  • 類別：

    電纜，電線 - 管理 > 標記物

  • 系列：

    STS

  • 包裝：

    盒

  • 類型：

    導(dǎo)線標記

  • 尺寸：

    0.75" 寬 x 1.40" 長（19.1mm x 35.6mm）

  • 電纜直徑：

    0.090" ~ 0.315"（2.29mm ~ 8.00mm）

  • 圖例：

    空白

  • 顏色：

    白色

  • 材料：

    乙烯基

  • 描述：

    WIRE MARKER 19.1MM X 35.6MM WHT

供應(yīng)商型號品牌批號封裝庫存備注價格
BOURNS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
STM
23+
8-SOIC
5000
原裝正品,假一罰十
 詢價
ST
2020+
SOP-8
3000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
STM
23+
N/A
19526
詢價
ST
08+
SOP8
1200
全新原裝進口自己庫存優(yōu)勢
 詢價
ST
17+
VFQFPN163X3X1.0
5000
原裝部分現(xiàn)貨
 詢價
STM
14+
SO-8
7500
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
AMCC
22+
BGA
2317
品牌專業(yè)分銷商,可以零售
 詢價
ST
23+
NA
19587
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理QQ1304306553
 詢價
ST
21+
SOP8
56990
只做原裝,絕對現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
 詢價
更多STS供應(yīng)商 更新時間2025-1-17 14:26:00

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