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STTH5L06D

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description TheSTTH5L06,whichusesSTTurbo2600Vtechnology,isspeciallysuitedasboostdiodeindiscontinuousorcriticalmodepowerfactorcorrections. Thisdevice,availableinTO-220AC,TO-220FPACDPAKandDO-201AD,isalsointendedforuseasafreewheelingdiodeinpowersuppliesan

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH5L06D

Turbo 2 ultrafast high voltage rectifier

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH5L06D

包裝：管件 封裝/外殼：TO-220-2 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE GEN PURP 600V 5A TO220AC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

DMN5L06

SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?SingleN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN5L06DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage(1.0Vmax) ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?ESDProtectedupto2kV ?GreenDevice

DIODES

Diodes Incorporated

DMN5L06DMKQ

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. ?GeneralPurposeInterfacingSwitch ?PowerManagementFunctions Features ?LowOn-Resi

DIODES

Diodes Incorporated

DMN5L06DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance(1.0VMax) ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?ESDProtectedupto2kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN5L06K

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN5L06K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. ?Loadswitches ?Levelswitches Feat

DIODES

Diodes Incorporated

DMN5L06K

N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFET hasbeendesignedtominimizeRDS(on)andyetmaintainsuperior switchingperformance.ThisdeviceisidealforuseinNotebook batterypowermanagementandLoadswitch. FeaturesandBenefits ?LowOn-Re

DIODES

Diodes Incorporated

DMN5L06T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?N-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN5L06TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?LeadFreeByDesign/RoHSCompliant(Note2) ?ESDProtectedUpTo2kV ?GreenDevice(Note3) ?QualifiedtoAEC-Q101standardsforHighReliability

DIODES

Diodes Incorporated

DMN5L06V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06VA

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?“Green”Device(Note3)

DIODES

Diodes Incorporated

DMN5L06VAK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?VeryLowGateThresholdVoltage,1.0VMax ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAnt

DIODES

Diodes Incorporated

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STTH5L06D

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    管件

  • 二極管類型：

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io)：

    5A

  • 速度：

    快速恢復(fù) =< 500ns，> 200mA（Io）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-2

  • 供應(yīng)商器件封裝：

    TO-220AC

  • 工作溫度 - 結(jié)：

    175°C（最大）

  • 描述：

    DIODE GEN PURP 600V 5A TO220AC

供應(yīng)商型號品牌批號封裝庫存備注價格
ST/意法半導(dǎo)體
22+
TO-220AD-2
6008
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
ST/意法半導(dǎo)體
2023
TO-220AD-2
6000
公司原裝現(xiàn)貨/支持實單
 詢價
ST
17+
TO220-2
6200
詢價
ST
2016+
TO-220-2
10641
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
ST
2016+
TO-220AC
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
ST
24+
原廠原封
6523
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品
 詢價
ST
10+
5000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
ST
23+
TO-220
9896
詢價
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
ST
23+
原盒原包裝
33000
全新原裝假一賠十
 詢價
更多STTH5L06D供應(yīng)商 更新時間2024-12-25 8:30:00

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