SW50N06T中文資料芯派科技數(shù)據(jù)手冊PDF規(guī)格書
SW50N06T規(guī)格書詳情
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
Features
■ High ruggedness
■ RDS(ON) (Max 16.8m?)@VGS=10V
■ Gate Charge (Typ 41nC)
■ Improved dv/dt Capability
■ 100 Avalanche Tested
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SIW |
23+ |
NA/ |
5766 |
原廠直銷,現(xiàn)貨供應,賬期支持! |
詢價 | ||
SILICONWO |
24+ |
QFN |
10500 |
全新原裝正品現(xiàn)貨假一罰十 |
詢價 | ||
WORKS |
24+ |
QFN |
35200 |
原裝現(xiàn)貨/放心購買 |
詢價 | ||
SIW |
22+ |
QFN |
6521 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
新 |
5 |
全新原裝 貨期兩周 |
詢價 | ||||
SILICONWO |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
QUALCOMM |
24+ |
N/A |
2207 |
原裝原裝原裝 |
詢價 | ||
SILICON |
15+ |
QFN |
2576 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SIW |
22+ |
QFN |
12000 |
只做原裝、原廠優(yōu)勢渠道、假一賠十 |
詢價 | ||
SAMWIN |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費! |
詢價 |
