SW50N06T中文資料芯派科技數(shù)據(jù)手冊(cè)PDF規(guī)格書
SW50N06T規(guī)格書詳情
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
Features
■ High ruggedness
■ RDS(ON) (Max 16.8m?)@VGS=10V
■ Gate Charge (Typ 41nC)
■ Improved dv/dt Capability
■ 100 Avalanche Tested
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SIW |
23+ |
NA/ |
5766 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) | ||
WORKS |
24+ |
QFN |
35200 |
原裝現(xiàn)貨/放心購買 |
詢價(jià) | ||
SAMWIN |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
SIW |
24+ |
QFN |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
SILICON |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
SILICONWO |
24+ |
QFN |
10500 |
全新原裝正品現(xiàn)貨假一罰十 |
詢價(jià) | ||
SIW |
22+ |
QFN |
12000 |
只做原裝、原廠優(yōu)勢(shì)渠道、假一賠十 |
詢價(jià) | ||
SIW |
23+ |
QFN |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
SIW |
22+ |
QFN |
12000 |
只做原裝、原廠優(yōu)勢(shì)渠道、假一賠十 |
詢價(jià) | ||
QUALCOMM |
22+ |
N/A |
2207 |
原裝原裝原裝 |
詢價(jià) |
