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TC518128ASP

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128ASP-10

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128ASP-12

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128ASP-80

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128ASPL

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128ASPL-10

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128ASPL-12

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128ASPL-80

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BFL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BFL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518128B-Voperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BFTL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518128B-Voperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BFTL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BFWL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BFWL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518128B-Voperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BPL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518128B-Voperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BPL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128BSPL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128CFL

131,072-WORDBY8-BITCMOSPSEUDOSTATICRAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128CFTL

131,072-WORDBY8-BITCMOSPSEUDOSTATICRAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518128CFWL

131,072-WORDBY8-BITCMOSPSEUDOSTATICRAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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2500
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22+
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8200
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12
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12
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22+
SOP-32
4650
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28600
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更多TC518128ASP供應(yīng)商 更新時(shí)間2024-11-16 16:00:00