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TC518129AFL

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFL

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFL-10

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFL-10LV

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFL-12

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFL-12LV

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFL-80

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFL-80LV

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFTL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFTL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFW

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFWL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AFWL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129AP

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129APL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129APL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129ASP

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129ASPL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC518129BFL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518129B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129B-Voperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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TOSHIBA
22+
SMD
7500
十年品牌!原裝現(xiàn)貨!!!
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2016+
SOP32
9000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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TOS
24+
SOP-32
2500
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TOSHIBA
2016+
SOP32
6523
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TOSHIBA
2021+
SOP32
6239
百分百原裝正品
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22+
SOP32
8200
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TC
2023+
80000
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2021+
SOP
100500
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23+
SOP32
50000
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2022
SOP32
80000
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更多TC518129AFL供應(yīng)商 更新時(shí)間2024-11-15 17:11:00