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TC518129APL	文件：376.41 Kbytes Page：14 Pages	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129APL	文件：301.04 Kbytes Page：9 Pages	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129APL-10	文件：301.04 Kbytes Page：9 Pages	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129APL-10LV	文件：376.41 Kbytes Page：14 Pages	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129APL-12	文件：301.04 Kbytes Page：9 Pages	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129APL-12LV	文件：376.41 Kbytes Page：14 Pages	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129APL-80	文件：301.04 Kbytes Page：9 Pages	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129APL-80LV	文件：376.41 Kbytes Page：14 Pages	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518129A-LVisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129A-LV utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129A-LVoperatesfr	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129ASP	文件：301.04 Kbytes Page：9 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129ASPL	文件：301.04 Kbytes Page：9 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Aoperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BFL	文件：548.07 Kbytes Page：9 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BFL	文件：477.27 Kbytes Page：14 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129B-Voperatesfrom	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BFTL	文件：548.07 Kbytes Page：9 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BFTL	文件：477.27 Kbytes Page：14 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129B-Voperatesfrom	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BFWL	文件：548.07 Kbytes Page：9 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BFWL	文件：477.27 Kbytes Page：14 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129B-Voperatesfrom	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BPL	文件：477.27 Kbytes Page：14 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129B-Visa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129B-V utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518129B-Voperatesfrom	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BPL	文件：548.07 Kbytes Page：9 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129BSPL	文件：548.07 Kbytes Page：9 Pages	131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518129Bisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518129Butilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518129Boperatesfromasing	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA
TC518129CFTL	文件：273 Kbytes Page：12 Pages	131,072-WORDBY8-BITCMOSPSEUDOSTATICRAM DESCRIPTION TheTC518129CPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory(PSRAM) organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOSperipheral circuitrytoprovidelargecapacity,highspeedandlowpower.Itusesasingl	TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝	TOSHIBA

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	TC518129APL-10LV		24+		2500	自己現(xiàn)貨	詢價(jià)
深圳市力通偉業(yè)半導(dǎo)體有限公司	TC518129ASPL-80	TOSHIBA	D/C	DIP	7	特價(jià)熱銷現(xiàn)貨庫存100%原裝正品歡迎來電訂購!	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	TC518129ASPL-80	TOSHIBA	22+	DIP	8200	原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢	詢價(jià)
深圳市佳鑫美電子科技有限公司	TC518129BFWL-7		22+	SOP	2700	全新原裝自家現(xiàn)貨優(yōu)勢!	詢價(jià)
深圳市勤思達(dá)科技有限公司	TC518129CFWI-80	TOSHIBA	09+	SOP32	5500	原裝無鉛,優(yōu)勢熱賣	詢價(jià)
深圳市航潤創(chuàng)能電子集團(tuán)有限公司	TC518129CFWL-10	TOSHIBA	21+	SOP-32	780	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市振芯物聯(lián)科技有限公司	TC518129CFWL-10	TOSHIBA	22+	SOP-32	28600	只做原裝正品現(xiàn)貨假一賠十一級(jí)代理	詢價(jià)
深圳市明盛嘉電子科技有限公司	TC518129CFWL-10	TOSHIBA/東芝	21+	SOP-32	5000	原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)	詢價(jià)
深圳市威雅利發(fā)展有限公司	TC518129CFWL-10	TOSHIBA	9527+	SOP-32	780	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	TC518129CFWL-10	TOSHIBA		SOP32	699839	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)

更多TC518129APL供應(yīng)商更新時(shí)間2024-11-16 16:00:00

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