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TC51V

500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators

[TAK_CHEONG] SpecificationFeatures: ■ZenerVoltageRange2.0to56Volts ■LL-34(Mini-MELF)Package ■SurfaceDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■Allexternalsurfacesarecorrosionresistantandleadsarereadilysolderable ■1stbandin

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

TC51V

500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators

SpecificationFeatures: ■ZenerVoltageRange2.0to75Volts ■DO-35Package(JEDEC) ■Through-HoleDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■AllExternalSurfacesAreCorrosionResistantAndLeadsAreReadilySolderable ■RoHSCompliant ■Solder

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌電子德昌電子(集團(tuán))有限公司

TC51V4260DFTS

262,144 WORD X 16 BIT DYNAMIC RAM

Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V4260DFTS-60

262,144 WORD X 16 BIT DYNAMIC RAM

Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V4260DFTS-70

262,144 WORD X 16 BIT DYNAMIC RAM

Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512AF

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512AF-12

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512AF-15

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512AFT

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512AFT-12

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512AFT-15

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512ATR

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512ATR-12

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC51V8512ATR-15

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細(xì)參數(shù)

  • 型號:

    TC51V

  • 功能描述:

    500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators

供應(yīng)商型號品牌批號封裝庫存備注價格
TOSHIBA
TSSOP
800
正品原裝--自家現(xiàn)貨-實單可談
詢價
TOS
05+
原廠原裝
19598
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
24+
SSOP
7500
十年品牌!原裝現(xiàn)貨!!!
詢價
TOSHIBA
24+
原廠封裝
2909
原裝現(xiàn)貨假一罰十
詢價
TOSHIBA
23+
SSOP-44
5000
原裝正品,假一罰十
詢價
TOSHIBA
23+
TSOP
9526
詢價
TOSH
95+
SOP
2255
全新原裝進(jìn)口自己庫存優(yōu)勢
詢價
TOS
2339+
TSOP
6232
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
詢價
TOSHIBA
11+
SSOP-44
8000
全新原裝,絕對正品現(xiàn)貨供應(yīng)
詢價
TOS
1993
48
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
更多TC51V供應(yīng)商 更新時間2025-1-18 11:40:00