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TC551001AFTI

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001AFTI

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001AFTL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001AFTL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001API

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001API

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001APL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001APL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001ATRI

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001ATRI

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001ATRL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001ATRL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001BFL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001BFL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001BFTL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001BFTL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001BPL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001BPL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001BPL

SILICONGATECMOS131,072WORDx8BITSTATICRAM

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC551001BTRL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

供應(yīng)商型號品牌批號封裝庫存備注價格
TOS
22+
SOP-32
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢
詢價
TOSHIBA
24+
SOP
7500
十年品牌!原裝現(xiàn)貨!!!
詢價
TOSHIBA
24+
SOP-32
13
詢價
TOSHIBA/東芝
19+
SOP
32000
原裝正品,現(xiàn)貨特價
詢價
TOS
2023+
SOP-32
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
TOSHIBA
24+
SOP32
35200
一級代理/放心采購
詢價
Toshiba
26
公司優(yōu)勢庫存 熱賣中!!
詢價
TOSHIBA/東芝
22+
SOP
9000
現(xiàn)貨,原廠原裝假一罰十!
詢價
TOSHIBA
2016+
SOP
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品!
詢價
TOSHIBA/東芝
21+
SOP32
23000
只做正品原裝現(xiàn)貨
詢價
更多TC551001AFL/BFL供應(yīng)商 更新時間2025-1-15 16:10:00