首頁(yè) >TDA10086HT/C>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AMERICANCORDSET;230cmLONGNEMA5-15PTOIEC60320C13,LEFTHANDED | POWERDYNAMICS PowerDynamics, Inc | POWERDYNAMICS | ||
ContinuousHingewithClamps,Type4 | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
ScrewCover,Type12 | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.86Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.86Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
CERAMICDIELECTRICTRIMMERCAPACITORS | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
GPSL1bandSMTAntenna | WPI World Produts Inc. | WPI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
PHI |
QFP64 |
02+ |
26 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
PHILIPS |
24+ |
QFP64 |
739 |
詢價(jià) | |||
PHI |
17+ |
QFP64 |
9988 |
只做原裝進(jìn)口,自己庫(kù)存 |
詢價(jià) | ||
PHI |
23+ |
QFP64 |
20000 |
全新原裝假一賠十 |
詢價(jià) | ||
PHILIPS |
23+ |
TQFP-64 |
12300 |
詢價(jià) | |||
PHILIPS |
02+/03+ |
TQFP |
5520 |
全新原裝100真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
PHILIPS |
23+ |
TQFP |
5500 |
現(xiàn)貨,全新原裝 |
詢價(jià) | ||
PHILIPS |
11+ |
TQFP |
8000 |
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng) |
詢價(jià) | ||
PHI |
24+ |
TQFP |
22500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
TRIDENT |
2020+ |
2011+PB |
800 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) |
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