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TDA8510

26 W BTL and 2 x 13 W SE power amplifiers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA8510J

26 W BTL and 2 x 13 W SE power amplifiers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

UFR8510

ULTRAFASTRECOVERYRECTIFIER

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號(hào)：

    TDA8510

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    26 W BTL and 2 x 13 W SE power amplifiers

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
PHILIPS
ZSIP17
68500
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
TOSHIBA
2025+
ZIP
4865
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價(jià)
PHILIPS
24+
雙排
2500
自己現(xiàn)貨
 詢價(jià)
ZIP
3200
原裝長(zhǎng)期供貨!
 詢價(jià)
PHILIPS
24+
原裝進(jìn)口原廠原包接受訂貨
156
原裝現(xiàn)貨假一罰十
 詢價(jià)
NXP原裝現(xiàn)貨
24+
ZIP
3500
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
PHI
2016+
ZIP-17
6528
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品!
 詢價(jià)
PHI
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
NXP
24+
DBS17P
5810
只做原裝正品
 詢價(jià)
PHILIPS
24+
ZIP
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
更多TDA8510供應(yīng)商 更新時(shí)間2025-4-25 9:29:00

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