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PESD5V0V4UF

VerylowcapacitanceunidirectionalquadrupleESDprotectiondiodearrays

1.1Generaldescription VerylowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protection diodearraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedto protectuptofoursignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3A

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PESD5V0V4UF

VerylowcapacitanceunidirectionalquadrupleESDprotectiondiodearrays

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PESD5V0V4UG

VerylowcapacitanceunidirectionalquadrupleESDprotectiondiodearrays

1.1Generaldescription VerylowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protection diodearraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedto protectuptofoursignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3A

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PESD5V0V4UG

VerylowcapacitanceunidirectionalquadrupleESDprotectiondiodearrays

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PESD5V0V4UG

VerylowcapacitancequadrupleESDprotectiondiodearraysinSOT353package

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PESD5V0V4UK

VerylowcapacitanceunidirectionalquadrupleESDprotectiondiodearrays

1.1Generaldescription VerylowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protection diodearraysinaleadlessultrasmallSOT891Surface-MountedDevice(SMD)plastic packagedesignedtoprotectuptofourunidirectionalsignallinesfromthedamagecaused byESDand

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PESD5V0V4UK

VerylowcapacitanceunidirectionalquadrupleESDprotectiondiodearrays

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PESD5V0V4UW

VerylowcapacitanceunidirectionalquadrupleESDprotectiondiodearrays

1.1Generaldescription VerylowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protection diodearraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedto protectuptofoursignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3A

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PESD5V0V4UW

VerylowcapacitanceunidirectionalquadrupleESDprotectiondiodearrays

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PESD5V0V4UW

VerylowcapacitancequadrupleESDprotectiondiodearraysinSOT665package

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PESD5V0V4UW

LOWCAPACITANCETVSDIODEARRAY

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±15kV Contactdischarge:±8kV –IEC61000-4-4(EFT)40A(5/50ns) RoHSCompliant –IEC61000-4-5(Lightning)5A(8/20μs) A

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

TESD5V0V4UA

VWM=5V,0.8pFESDProtectionArray

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

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6985
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Taiwan Semiconductor
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Taiwan Semiconductor(臺(tái)灣半導(dǎo)
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SPSEMI
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Spsemi
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SOT-23
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更多TESD5V0V4UARDG供應(yīng)商 更新時(shí)間2021-9-14 10:50:00

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