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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
TF	文件：459.51 Kbytes Page：6 Pages	Mid Size Snap-acting Switches Features/Benefits ?Broadrangeofoperatingforces ?Ratingsupto21AMPS ?Widevarietyofactuatorstyles ?Quickconnectterminations	CK-COMPONENTS C&K Components	CK-COMPONENTS
TF003200AV-SW	文件：1.50334 Mbytes Page：4 Pages	32MHz IF SAW Filter ?2.96MHzBandwidth	Transko Transko Electronics, Inc.	Transko
TF006000BV-IT	文件：1.23258 Mbytes Page：3 Pages	IF Bandpass Filter ?LowLossFilter ?SingleEndedOperation	Transko Transko Electronics, Inc.	Transko
TF023N04NG	文件：4.35827 Mbytes Page：6 Pages	Marking：023N04NG；Package：PDFNWB5X6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF023N04NGusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitchin	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF025N06NG	文件：4.25167 Mbytes Page：6 Pages	N -CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF025N06NGusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitchi	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF030N02N	文件：2.68399 Mbytes Page：5 Pages	N -CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF030N02Ncombinesadvancedtrench MOSFETtechnologywithalowresistance packagetoprovideextremelylowRDS(ON). ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizeconductiveloss LowGateChargeforfastswitching LowThermalresi	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF030N03M	文件：3.50556 Mbytes Page：6 Pages	N -CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF030N03Musesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF030N03N	文件：3.41313 Mbytes Page：6 Pages	Marking：TF030N03N；Package：PDFWB5X6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF030N03NusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevariety ofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF030P02N	文件：3.86526 Mbytes Page：5 Pages	P -CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF030P02NcombinesadvancedtrenchMOSFET technologywithalowresistancepackagetoprovide extremelylowRDSON.Thisdeviceisidealforloadswitch andbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tomin	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF035N03N	文件：2.54746 Mbytes Page：5 Pages	Marking：TF035N03N；Package：PDFNWB5x6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF035N03Ncombinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimiz	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF040N03M	文件：2.5723 Mbytes Page：5 Pages	Marking：TF040N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF040N03Mcombinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimiz	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF040N03N	文件：2.41029 Mbytes Page：5 Pages	Marking：TF040N03N；Package：PDFNWB5x6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF040N03Ncombinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimiz	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF050N03M	文件：3.41048 Mbytes Page：6 Pages	Marking：TF050N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF050N03MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF050N03MG	文件：1.42933 Mbytes Page：6 Pages	N -CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF050N03MGusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitchi	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF050N04M	文件：2.84964 Mbytes Page：5 Pages	Marking：TF050N04M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF050N04Mcombinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimiz	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF050N04N	文件：4.31461 Mbytes Page：6 Pages	Marking：TF050N04N；Package：PDFNWB5x6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF050N04NusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF050P03N	文件：2.93139 Mbytes Page：5 Pages	Marking：050P03N；Package：PDFNWB5x6-8L；P -CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF050P03NcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackage toprovideextremelylowRDS(ON). ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizeconductiveloss LowGateChargeforfastswitchingLowThermalresist	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF060N03M	文件：4.28487 Mbytes Page：6 Pages	Marking：TF060N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF060N03MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF060N03N	文件：4.2957 Mbytes Page：6 Pages	Marking：TF060N03N；Package：PDFNWB5x6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF060N03NusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG
TF060N04NG	文件：3.11919 Mbytes Page：5 Pages	N -CHANNEL ENHANCEMENT MODE POWER MOSFET ●GeneralDescription TheTF060N04NGcombinesadvancedtrench MOSFETtechnologywithalowresistancepackage toprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)to	TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司	TUOFENG

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晶體管資料

型號(hào)：
TF260
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Ge-NPN
性質(zhì)：
封裝形式：
直插封裝
極限工作電壓：
100V
最大電流允許值：
0.3A
最大工作頻率：
<1MHZ或未知
引腳數(shù)：
3
可代換的型號(hào)：
3DG182B,
最大耗散功率：
0.6W
放大倍數(shù)：
β=10
圖片代號(hào)：
D-12
vtest：
100
htest：
999900
atest：
0.3
wtest：
0.6

詳細(xì)參數(shù)

型號(hào)：
TF
制造商：
Fischer Elektronik GmbH & Co KG
功能描述：
Bulk
功能描述：
SOCKET TRANSISTOR TO18 3PIN
功能描述：
SOCKET TRANSISTOR, TO18, 3PIN
功能描述：
TRANSISTOR SOCKET, 3WAY, PC BOARD; Connector
Type：
TO-18 Socket;
Series：
TF; No. of
Contacts：
3; Contact
Termination：
Through Hole Vertical; Contact
Material：
Beryllium Copper; Contact
Plating：
Gold; Socket
Mounting：
PC Board ;RoHS
Compliant：
Yes

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市鼎欣微電子有限公司	TF	HJS	21+	TF	23000	只做正品原裝現(xiàn)貨	詢價(jià)
艾睿國(guó)際（香港）有限公司	TF	TI/德州儀器	2021+	SOT-223	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	TF	TOSHIBA/東芝	22+	SOD-423	25000	只有原裝原裝,支持BOM配單	詢價(jià)
深圳市拓億芯電子有限公司	TG	NXP/恩智浦	23+	SOT353	15000	全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市仟禧電子有限公司	TH		22+	R8RP	20000	保證原裝正品,假一陪十	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	TH		22+	R8RP	100000	代理渠道/只做原裝/可含稅	詢價(jià)
瀚佳科技(深圳)有限公司	TI	19+	24+	公司大量原裝正品現(xiàn)貨/隨時(shí)可以	65300	一級(jí)代理/放心購(gòu)買(mǎi)!	詢價(jià)
深圳市正納電子有限公司	TI	NA	23+	NA	26094	10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè)	詢價(jià)
深圳市河鋒鑫科技有限公司	TI				80000		詢價(jià)
深圳市吉銀科技有限公司	TI				6000		詢價(jià)

更多TF供應(yīng)商更新時(shí)間2025-1-17 9:02:00

晶體管資料

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