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TFDT6501E

Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TFDT6501E-TR4

Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

THN6501

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501E

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501E

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501F

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighGain MAG=11.5dBatf=1GHz,VCE=10V,IC=20mA oHighTransitionFrequency fT=7GHzatf=1GHz,VCE=10V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501S

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501S

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501U

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501U

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

THN6501Z

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

AUK

AUK corp

THN6501Z

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

TACHYONICS

Tachyonics CO,. LTD

TM6501

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

TM6501

RFAMPLIFIER

SPECTRUM

Spectrum Instrumentation GmbH

TMR6501

SingleChannelTMRMagneticPatternRecognitionSensor

FeaturesandBenefits ?Highsensitivityandexcellentgapperformances ?Outputvoltageisindependentofscanningspeed ?Differentialoutput,highCMRRperformance ?Singlechanneldetection,5mmdetectionwidth ?Compactsize:L10.5mmxW8mmxH9.6mm ?Simplestructureforlowcostso

MULTIDIMENSIONMultiDimension Technology Co.,Ltd.

多維科技江蘇多維科技有限公司

TN6501

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

TPC6501

TransistorSiliconNPNEpitaxialType

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPC6501

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPC6501

SiliconNPNEpitaxialType

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TSHA6501

InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs

Description TheTSHA650.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Incontras

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    TFDT6501

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Fast Infrared Transceiver Module Family(FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
2021+
SMD8
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
VISHAY
13+
15058
原裝分銷
詢價
VISHAY
24+
SOP
10000
詢價
VISHAY原裝
22+23+
SMD8
29209
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價
VISHAY/威世
1641+
SMD8
14930
只做原裝現(xiàn)貨、主營光電元器件/門市現(xiàn)貨
詢價
VISHAY
2020+
紅外數(shù)據(jù)傳輸
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
VISHAY/威世
23+
na
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VISHAY/威世
2022
na
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
VISHAY/威世
21+
na
6500
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
VISHAY
07+
na
16000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
更多TFDT6501供應(yīng)商 更新時間2024-12-29 15:00:00