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TGF4230-SCC中文資料TriQuint數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

TGF4230-SCC
廠商型號(hào)

TGF4230-SCC

功能描述

DC - 12 GHz Discrete HFET

文件大小

221.41 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 TriQuint Semiconductor
企業(yè)簡(jiǎn)稱

TriQuint

中文名稱

TriQuint Semiconductor官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-23 11:10:00

TGF4230-SCC規(guī)格書(shū)詳情

Description

The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.

Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes.

The TGF4230-SCC is readily assembled using automatic equipment.

For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

Key Features and Performance

? Nominal Pout of 28.5 dBm at 8.5 GHz

? Nominal Gain of 10.0 dB at 8.5 GHz

? Nominal PAE of 55 at 8.5 GHz

? 1200 μm HFET

? 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)

? Bias at 8 Volts, 96 mA

Primary Applications

? Cellular Base Stations

? High dynamic-range LNAs

? Military and Space

產(chǎn)品屬性

  • 型號(hào):

    TGF4230-SCC

  • 功能描述:

    射頻GaAs晶體管 DC-12.0GHz 0.7W HFET

  • RoHS:

  • 制造商:

    TriQuint Semiconductor

  • 技術(shù)類型:

    pHEMT

  • 頻率:

    500 MHz to 3 GHz

  • 增益:

    10 dB

  • 噪聲系數(shù):

    正向跨導(dǎo)

  • gFS(最大值/最小值):

    4 S 漏源電壓

  • 閘/源擊穿電壓:

    - 8 V

  • 漏極連續(xù)電流:

    3 A

  • 最大工作溫度:

    + 150 C

  • 功率耗散:

    10 W

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