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TIOL112YAHR

TIOL112 and TIOL112x IO-Link Device Transceivers with Low Residual Voltage and Integrated Surge Protection in Small Packages

1Features ?7-Vto36-Vsupplyvoltage ?PNP,NPNorIO-Linkconfigurableoutput –IEC61131-9COM1,COM2andCOM3Data RateSupport ?Functionalsafety-capable –Documentationavailabletoaidinfunctional safetysystemdesign ?Pin-compatiblewithTIOL111(x)withimproved performance

TITexas Instruments

德州儀器美國德州儀器公司

TIP112

EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain. :hFE=1000(Min.),?VCE=4V,IC=1A. ?LowCollector-EmitterSaturationVoltage. ?ComplementarytoTIP117.

KECKEC CORPORATION

KEC株式會社

TIP112

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors ?ComplementarytoTIP115/116/117 ?HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ?LowCollector-EmitterSaturationVoltage ?IndustrialUse

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

TIP112

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

bocaBoca Semiconductor Corporation

博卡博卡半導體公司

TIP112

DARLINGTON2AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

TIP112

POWERTRANSISTORS(2.0A,60-100V,50W)

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

TIP112

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP115,TIP116andTIP117 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A

POINN

Power Innovations Ltd

TIP112

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

TIP112

PlasticMedium-PowerComplementarySiliconTransistors

PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain? hFE=2500(Typ)@IC =1.0Adc ?Collector?EmitterSustainingVoltage?@30mAdc VCEO(sus)=60Vdc(Min)

ONSEMION Semiconductor

安森美半導體安森美半導體公司

TIP112

TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlow-speedswitchingapplications.

DCCOM

Dc Components

TIP112

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications TO-220PlasticPackage

TEL

TRANSYS Electronics Limited

TIP112

PlasticMedium-PowerComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

TIP112

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

DESCRIPTION TheUTCTIP112isdesignedforsuchapplicationsas:DC/DCconverterssupplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.relays,buzzersandmotors). FEATURES *

UTCUnisonic Technologies

友順友順科技股份有限公司

TIP112

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP115/116/117 APPLICATIONS ?Forindustrialuse

SAVANTIC

Savantic, Inc.

TIP112

DarlingtonPowerTransistors(NPN)

DarlingtonPowerTransistors(NPN) Features ?Designedforgeneral-purposeamplifierandlowspeed switchingapplications ?RoHSCompliant

TAITRON

TAITRON Components Incorporated

TIP112

TO-220-PowerTransistorsandDarlingtons

RECTRON

Rectron Semiconductor

TIP112

SiliconNPNDarlingtonPowerTransistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?ThecomplementaryPNPtypesaretheTIP115/116/117respectively ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?Mois

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

TIP112

SiliconNPNDarlingtonPowerTransistor

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

TIP112

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP115/116/117 APPLICATIONS ?Forindustrialuse

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

TIP112

DARLINGTONTRANSISTOR(NPN)

FEATURES ●HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ●LowCollector-EmitterSaturationVoltage ●IndustrialUse

FS

First Silicon Co., Ltd

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24+
400
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TI
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56000
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100
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更多TIOL112YAHR供應商 更新時間2024-12-28 16:00:00

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