零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
TIP105 | POWER TRANSISTORS(8A,60-100V,80W) 8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | |
TIP105 | DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc ?Collector–EmitterSustainingVoltage—@30mAdc | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
TIP105 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PlasticMedium?PowerComplementarySiliconTransistors Designedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE=2500(Typ)@IC=4.0Adc ?Collector?EmitterSustainingVoltage?@30mAdc VCEO(sus)=60Vdc(Min)? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
TIP105 | PNP SILICON POWER DARLINGTONS ●DesignedforComplementaryUsewithTIP100,TIP101andTIP102 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A | POINN Power Innovations Ltd | POINN | |
TIP105 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheTIP102isasiliconEpitaxial-BaseNPNpowertransistorinmonolithicDarlingtonconfigurationmountedinTO-220plasticpackage.Itisintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypeisTIP107. AlsoTIP105isaPNPtype. ■STMicroelectro | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
TIP105 | PNP SILICON POWER DARLINGTONS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP | TRSYS Transys Electronics | TRSYS | |
TIP105 | PNP (HIGH DC CURRENT GAIN MIN HGIHDCCURRENTGAINMINhFE=1000@VCE=-4V,Ic=-3A COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTERSATURATIONVOLTAGEMONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE ComplementarytoTIP100/101/102 | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
TIP105 | Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBaseEmitterShuntResistors ?HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) ?Collector-EmitterSustainingVoltage ?LowCollector-EmitterSaturationVoltage ?IndustrialUse ?ComplementarytoTIP100/101/102 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
TIP105 | Power Darlingtons for Linear and Switching Applications TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications | bocaBoca Semiconductor Corporation 博卡博卡半導(dǎo)體公司 | boca | |
TIP105 | PLASTIC POWER TRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications | TEL TRANSYS Electronics Limited | TEL | |
TIP105 | Darlington Power Transistors (PNP) DarlingtonPowerTransistors(PNP) Features ?Designedforgeneral-purposeamplifierandlowspeedswitchingapplications ?RoHSCompliant | TAITRON TAITRON Components Incorporated | TAITRON | |
TIP105 | Silicon PNP Darlington Power Transistors DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP100/101/102 APPLICATIONS ?Forindustrialuse | SAVANTIC Savantic, Inc. | SAVANTIC | |
TIP105 | Monolithic Construction With Built In Base-Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP100/101/102 | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | |
TIP105 | PNP Plastic Medium-Power Silicon Transistors Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc ?LowCollector-EmitterSaturationVoltage ?MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors ?TO-220Compac | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | |
TIP105 | PNP Epitaxial Silicon Darlington Transistor MonolithicConstructionWithBuiltInBaseEmitterShuntResistors ?HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) ?Collector-EmitterSustainingVoltage ?LowCollector-EmitterSaturationVoltage ?IndustrialUse ?ComplementarytoTIP100/101/102 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
TIP105 | SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. NPNcomplementsareTIP100-101-102 CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | |
TIP105 | PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS 8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
TIP105 | PLASTIC POWER TRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications | CDIL Continental Device India Limited | CDIL | |
TIP105 | PNP Epitaxial Silicon Darlington Transistor MonolithicConstructionWithBuiltInBaseEmitterShuntResistors ?HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) ?Collector-EmitterSustainingVoltage ?LowCollector-EmitterSaturationVoltage ?IndustrialUse ?ComplementarytoTIP100/101/102 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
TIP105 | Plastic Medium-Power Complementary Silicon Transistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-P+Darl+Di
- 性質(zhì):
低頻或音頻放大 (LF)_功率放大 (L)_開關(guān)管 (S
- 封裝形式:
直插封裝
- 極限工作電壓:
60V
- 最大電流允許值:
8A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號:
BD646,BD898,BDW74A...D,BDX54A...F,3CA10,
- 最大耗散功率:
80W
- 放大倍數(shù):
β>1000
- 圖片代號:
B-10
- vtest:
60
- htest:
999900
- atest:
8
- wtest:
80
產(chǎn)品屬性
- 產(chǎn)品編號:
TIP105
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個
- 包裝:
管件
- 晶體管類型:
PNP - 達(dá)林頓
- 不同?Ib、Ic 時?Vce 飽和壓降(最大值):
2.5V @ 80mA,8A
- 電流 - 集電極截止(最大值):
50μA
- 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):
1000 @ 3A,4V
- 工作溫度:
150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應(yīng)商器件封裝:
TO-220-3
- 描述:
TRANS PNP DARL 60V 8A TO220-3
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST(意法半導(dǎo)體) |
23+ |
TO-220 |
942 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
詢價 | ||
ST/意法 |
23+ |
TO-220 |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
STM |
21+ |
TO-220-3 |
2000 |
原裝正品 有掛有貨 |
詢價 | ||
ST/意法 |
22+ |
TO-220 |
2769 |
絕對原裝!公司現(xiàn)貨! |
詢價 | ||
STM |
13+ |
2000 |
TO-220-3 |
詢價 | |||
ST/意法半導(dǎo)體 |
22+ |
TO-220-3 |
6001 |
原裝正品現(xiàn)貨 可開增值稅發(fā)票 |
詢價 | ||
STMICROELECT |
05+ |
原廠原裝 |
4752 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
FAIRCHILD |
24+ |
TO-220 |
8866 |
詢價 | |||
STM |
13+ |
TO-220AB |
5950 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
ST |
11+ |
TO-220 |
8000 |
全新原裝,絕對正品現(xiàn)貨供應(yīng) |
詢價 |