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TJ9

Inductors, Toroid, High Current, Radial Leaded

FEATURES ?Printedcircuitmounting ?Widerangeofinductanceandcurrentratings ?ToroiddesignreducesEMI ?Verticalorhorizontalmountingtooptimize P.C.boardlayout ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATION Switchi

VishayVishay Siliconix

威世科技威世科技半導體

TJ9

Inductors Toroid, High Current

VishayVishay Siliconix

威世科技威世科技半導體

TJ90S04M3L

Switching Voltage Regulators

Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=3.4m?(typ.) (3)Lowleakagecurrent:IDSS=-10μA(max)(VDS=-40V) (4)Enhancementmode:Vth=-1.0to-2.0V(VDS=-10V,ID=-1mA) Applications ?Automotive ?MotorDrivers ?DC-DCConverters ?Switch

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TJ90S04M3L

Silicon P-Channel MOS (U-MOS)

1.Applications ?Automotive ?MotorDrivers ?DC-DCConverters ?SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=3.4mΩ(typ.) (3)Lowleakagecurrent:IDSS=-10μA(max)(VDS=-40V) (4)Enhancementmode:Vth=-1.0to-2

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TJ90S04M3L_V01

Silicon P-Channel MOS (U-MOS)

1.Applications ?Automotive ?MotorDrivers ?DC-DCConverters ?SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=3.4mΩ(typ.) (3)Lowleakagecurrent:IDSS=-10μA(max)(VDS=-40V) (4)Enhancementmode:Vth=-1.0to-2

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TJ9A10M3

Switching Voltage Regulators

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=120m?(typ.)(VGS=-10V) (2)Lowleakagecurrent:IDSS=-10μA(max)(VDS=-100V) (3)Enhancementmode:Vth=-2.0to-4.0V(VDS=-10V,ID=-1mA) Applications ?SwitchingVoltageRegulators

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TJ9A10M3

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TJ9A10M3

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-9A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=170mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

TJ9910

The TJ9910 is a PWM high-efficiency LED driver control IC

HTCHTC Korea TAEJIN Technology Co.

泰進韓國泰進技術股份有限公司

詳細參數

  • 型號:

    TJ9

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Inductors Toroid, High Current

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更多TJ9供應商 更新時間2024-12-27 15:30:00