零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HC49SMD12.666MHzCrystalUnit Features: GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49SMDcrystalunitforuseinwirelesstelecommunicationsdevices | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
ComplementarySwitchFETDrivers | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2715GRisP-ChannelMOSFETdesignedfor powermanagementapplicationsofnotebookcomputers andLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=4.6mΩMAX.(VGS=?10V,ID=?9.0A) RDS(on)2=9.0mΩMAX.(VGS=?4.5V,ID=?9.0A) ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
1.2GHzLOWPOWERCONSUMPTIONWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT 1.2GHzLOWPOWERCONSUMPTIONWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT FEATURES ?Lowpowerconsumption:15mW(VCC=3.4V,ICC=4.5mA)TYP. ?Highpowergain:19dBTYP.@f=0.5GHz ?Excellentfrequencyresponse:1.2GHzTYP.@3dBdownbelowthega | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Lowpowerconsumption:15mW(VCC=3.4V,ICC=4.5mA)TYP. ?Highpowergain:19dBTYP.@f=0.5GHz ?Excellentfrequencyresponse:1.2GHzTYP.@3dBdownbelowthegainat0.1GHz ?Inputandoutputmatching:50: ?Supersmallpackage:6pinminimold | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
1.2GHzLOWPOWERCONSUMPTIONWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT 1.2GHzLOWPOWERCONSUMPTIONWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT FEATURES ?Lowpowerconsumption:15mW(VCC=3.4V,ICC=4.5mA)TYP. ?Highpowergain:19dBTYP.@f=0.5GHz ?Excellentfrequencyresponse:1.2GHzTYP.@3dBdownbelowthega | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
LOWPOWERCONSUMPTIONSILICONMMICAMPLIFIER | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI |
2013 |
DIP8 |
200 |
全新 |
詢價 | ||
24+ |
DIP8 |
500 |
詢價 | ||||
TI德州儀器 |
22+ |
24000 |
原裝正品現(xiàn)貨,實單可談,量大價優(yōu) |
詢價 | |||
TI |
500 |
詢價 | |||||
TI |
24+ |
SOP-8 |
4897 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 | ||
TI |
11+ |
SOP8 |
8000 |
全新原裝,絕對正品現(xiàn)貨供應(yīng) |
詢價 | ||
TI |
2020+ |
SOP8 |
55 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
TI |
23+ |
SOP8 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
TI |
22+23+ |
SOP8 |
7660 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
TexasInstruments |
18+ |
ICOPAMPGP2.2MHZSGLLP8SOI |
6800 |
公司原裝現(xiàn)貨/歡迎來電咨詢! |
詢價 |
相關(guān)規(guī)格書
更多- TLC271ACD
- TLC271CD
- TLC271CP
- TLC271IDR
- TLC272ACP
- TLC272C
- TLC272CDR
- TLC272CPS
- TLC272IP
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相關(guān)庫存
更多- TLC271ACP
- TLC271CDR
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- TLC274
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- TLC27L2ID
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- TLC27L4CDR
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- TLC27L4IN
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- TLC372CDR
- TLC372CPS
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