零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
TZ2715A | HC49SMD 12.666MHz Crystal Unit Features: GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49SMDcrystalunitforuseinwirelesstelecommunicationsdevices | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | |
ComplementarySwitchFETDrivers | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
ComplementarySwitchFETDrivers | TI1Texas Instruments 德州儀器 | TI1 | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2715GRisP-ChannelMOSFETdesignedfor powermanagementapplicationsofnotebookcomputers andLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=4.6mΩMAX.(VGS=?10V,ID=?9.0A) RDS(on)2=9.0mΩMAX.(VGS=?4.5V,ID=?9.0A) ?L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
1.2GHzLOWPOWERCONSUMPTIONWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT 1.2GHzLOWPOWERCONSUMPTIONWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT FEATURES ?Lowpowerconsumption:15mW(VCC=3.4V,ICC=4.5mA)TYP. ?Highpowergain:19dBTYP.@f=0.5GHz ?Excellentfrequencyresponse:1.2GHzTYP.@3dBdownbelowthega | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Lowpowerconsumption:15mW(VCC=3.4V,ICC=4.5mA)TYP. ?Highpowergain:19dBTYP.@f=0.5GHz ?Excellentfrequencyresponse:1.2GHzTYP.@3dBdownbelowthegainat0.1GHz ?Inputandoutputmatching:50: ?Supersmallpackage:6pinminimold | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
1.2GHzLOWPOWERCONSUMPTIONWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT 1.2GHzLOWPOWERCONSUMPTIONWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT FEATURES ?Lowpowerconsumption:15mW(VCC=3.4V,ICC=4.5mA)TYP. ?Highpowergain:19dBTYP.@f=0.5GHz ?Excellentfrequencyresponse:1.2GHzTYP.@3dBdownbelowthega | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
LOWPOWERCONSUMPTIONSILICONMMICAMPLIFIER | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TST |
23+ |
- |
8640 |
華南總代 |
詢價 | ||
TST |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
TST |
24+ |
13600 |
真實(shí)庫存/絕無虛假/支持送貨 |
詢價 | |||
TST |
21+ |
標(biāo)準(zhǔn)封裝 |
57000 |
專營優(yōu)勢訂貨渠道! |
詢價 | ||
TAISAW |
N/A |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
24+ |
N/A |
58000 |
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇 |
詢價 | |||
TST |
15+ |
2520 |
2912 |
全新、原裝 |
詢價 | ||
TST |
NA |
N/A |
19 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價 | ||
TST |
23+ |
SMD |
56000 |
TST全系列在售,支持實(shí)單 |
詢價 | ||
TST |
23+ |
SMD |
25000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu) |
詢價 |
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