| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
TZ2762D | Crystal Unit SMD 2.0x1.6 40.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | |
CrystalUnitSMD2.0x1.640.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
900-MHzISMBandReceiver | Temic TEMIC Semiconductors | Temic | ||
900-MHzISMBandReceiver | Temic TEMIC Semiconductors | Temic | ||
MOSFIELDEFFECTTRANSISTOR Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3V,WIDEBANDMEDIUMPOWERSIMMICAMPLIFIER DESCRIPTION TheUPC2762TandUPC2763TareSiliconMonolithicintegratedcircuitswhicharemanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Theseamplifiersweredesignedfor900MHzand1.9GHzreceiversincellular,cordlessteleph | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER | CEL California Eastern Laboratories | CEL | ||
3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC2762TB,μPC2763TBandμPC2771TBaresiliconmonolithicintegratedcircuitsdesignedasamplifierformobilecommunications.TheseICsoperateat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. TheseICismanufacturedusingNEC’s20GHzfTN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TST |
23+ |
SMD |
56000 |
TST全系列在售,支持實單 |
詢價 | ||
TST |
23+ |
- |
35375 |
華南總代 |
詢價 | ||
TST |
23+ |
SMD |
25000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu) |
詢價 | ||
TST |
21+ |
標準封裝 |
6000 |
進口原裝,訂貨渠道! |
詢價 | ||
TST |
24+ |
15800 |
真實庫存/絕無虛假/支持送貨 |
詢價 | |||
24+ |
N/A |
67000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
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