零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
TLE4966K | | High Precision Hall-Effect Switch with Direction Detection | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
TLE4966KE6710HTSA1 | | 包裝:卷帶(TR) 封裝/外殼:SOT-23-6 細型,TSOT-23-6 功能:雙極開關(guān) 類別:傳感器,變送器 磁性傳感器 - 開關(guān)(固態(tài)) 描述:MAGNETIC SWITCH BIPOLAR 6TSOP | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
TLE4966KHTSA1 | | 包裝:散裝 封裝/外殼:SOT-23-6 細型,TSOT-23-6 功能:雙極開關(guān) 類別:傳感器,變送器 磁性傳感器 - 開關(guān)(固態(tài)) 描述:MAGNETIC SWITCH BIPOLAR TSOP-6-6 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
4966 | | 250(6.4)PCQUICK-FITMALETABS | KEYSTONE Keystone Electronics Corp. | KEYSTONE |
4966 | | PCQUICK-FITTERMINAL | KEYSTONE Keystone Electronics Corp. | KEYSTONE |
AM4966N | | DualN-Channel60-V(D-S)MOSFET | | AnalogPower |
LC4966 | | QuadBilateralSwitch
Overview
TheLC4966isanICthatprovidesthesamefunctionsastheMLC4066BandtheMLC4066BHoveranexpanded
usablevoltagerange.TheLC4966providesfourbidirectionalswitchcircuits.Thesecircuitsformalowimpedanceconductingpathbetweentheinputandoutputsideswhenthecorre | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO |
NTE4966 | | SurgeClamping,TransientOvervoltageSuppressorUnidirectional
Description:
TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime | | NTE |
PE4966 | | CFemaleBulkheadConnectorClamp-SolderAttachmentForRG59,RG62,.720inchDHole | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK |
SI4966DY | | DualN-Channel2.5-V(G-S)MOSFET
FEATURES
?Halogen-freeAccordingtoIEC61249-2-21
Definition
?TrenchFET?PowerMOSFET
?100RgTested
?ComplianttoRoHSDirective2002/95/EC
OrderingInformation:Si4966DY-T1-E3(Lead(Pb)-free)
Si4966DY-T1-GE3(Lead(Pb)-freeandHalogen-free) | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
SI4966DY | | DualN-Channel2.5-V(G-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
SZN4966 | | 6.8??390VOLTSZENERDIODES
FEATURES:
?HermeticallyGlassSealed
?HighPowerDissipation5W
?TightVoltageTolerance5
?ForotherVoltage,Power,orToleranceConsultFactory.
?TX,TXV,andS-LevelScreeningAvailable5/.
?Replacementfor1N4954–1N4996 | SSDI Solid States Devices, Inc | SSDI |
SZN4966 | | 5W6.8??390VOLTSZENERDIODES | SSDI Solid States Devices, Inc | SSDI |
TLE4966G | | HighPrecisionHall-EffectSwitchwithDirectionDetection
Features
?2.7Vto24Vsupplyvoltageoperation
?Operationfromunregulatedpowersupply
?Highsensitivityandhighstability
ofthemagneticswitchingpoints
?Highresistancetomechanicalstress
byActiveErrorCompensation
?Reversebatteryprotection(-18V)
?Superiortemperaturestabi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
TLE4966H | | HighPrecisionHall-EffectSwitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
TLE4966L | | HighPrecisionHall-EffectSwitchwithDirectionDetection | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
TLE4966L | | HighPrecisionHall-EffectSwitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
TLI4966G | | HighPrecisionHall-EffectSwitchwithDirectionDetection
1.1Features
?2.7Vto24Vsupplyvoltageoperation
?Operationfromunregulatedpowersupply
?Highsensitivityandhighstability
ofthemagneticswitchingpoints
?Highresistancetomechanicalstress
byActiveErrorCompensation
?Reversebatteryprotection(-18V)
?Superiortemperaturest | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |