零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
8.0AGLASSPASSIVATEDULTRAFASTRECTIFIER GlassPassivatedDieConstruction Ultrafast50nSand100nSRecoveryTime LowForwardVoltageDrop LowReverseLeakageCurrent HighSurgeCurrentCapability EpoxyMeetsUL94V-0Classification IdeallySuitedforUseinHighFrequency SMPS,InvertersandAsFreeWheelingDiodes | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE | ||
surface-mountLED | SEOULSeoul Semiconductor Co., Ltd. 首爾半導(dǎo)體首爾半導(dǎo)體有限公司 | SEOUL | ||
NPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC5006FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPNSILICONHIGHFREQUENCY | CEL California Eastern Labs | CEL | ||
NPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC5006FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIGH-FREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NONLINEARMODEL | CEL California Eastern Labs | CEL | ||
NPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC5006FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPNSILICONHIGHFREQUENCYTRANSISTOR DESCRIPTION TheUPA801TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC |
詳細(xì)參數(shù)
- 型號(hào):
TLP801A
- 制造商:
TOSHIBA
- 制造商全稱:
Toshiba Semiconductor
- 功能描述:
INFRARED LED + PHOTOTRANSISTOR
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
21+ |
DIPSOP |
72000 |
只做進(jìn)口原裝假一賠十 |
詢價(jià) | ||
GUANGPUY |
17+ |
器件和集成 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
13+ |
DIP-4 |
18678 |
原裝分銷 |
詢價(jià) | ||
KODENSHI原 |
25+23+ |
DIP-4 |
28410 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
20+ |
標(biāo)準(zhǔn) |
88720 |
紅外全新原裝主營(yíng)-可開原型號(hào)增稅票 |
詢價(jià) | ||
TOSHIBA/東芝 |
22+ |
DIPSOP |
25000 |
只有原裝原裝,支持BOM配單 |
詢價(jià) | ||
KODENSHI |
24+ |
DIP-4 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
GUANGPUY |
24+ |
DIP |
65200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
KODENSHI |
25+ |
DIP-4 |
65428 |
百分百原裝現(xiàn)貨 實(shí)單必成 |
詢價(jià) | ||
TOSHIBA |
2020+ |
DIP |
1000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) |
相關(guān)規(guī)格書
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- TLPGE1008A
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- TLPGE1100B(T11TEET
相關(guān)庫(kù)存
更多- TLP803
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- TLP830
- TLP830_07
- TLP831
- TLP831F
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- TLP836
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- TLPDCCAGE02/880168
- TLPG5600
- TLPG5600-AS12Z
- TLPGE1002A(T02)
- TLPGE1005B
- TLPGE1008A(TO4)
- TLPGE1100B
- TLPGE1100B(T11TE1,G
- TLPGE1100B-E1-A