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UPA801T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA801T

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801T

NPN SILICON HIGH FREQUENCY

CEL

California Eastern Laboratories

UPA801T

isc Silicon NPN RF Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

UPA801T

NONLINEAR MODEL

CEL

California Eastern Laboratories

UPA801TC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801TC-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801TF

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION TheUPA801TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA801T_09

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Laboratories

UPA801T_V1

NONLINEAR MODEL

CEL

California Eastern Laboratories

UPA801T-T1-A

NPN SILICON HIGH FREQUENCY

CEL

California Eastern Laboratories

UPA801T-A

包裝：卷帶（TR） 封裝/外殼：6-TSSOP，SC-88，SOT-363 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363

CEL

California Eastern Laboratories

UPA801T-T1-A

包裝：托盤 封裝/外殼：6-TSSOP，SC-88，SOT-363 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363

CEL

California Eastern Laboratories

詳細參數(shù)

  • 型號：

    UPA801T

  • 功能描述：

    射頻雙極小信號晶體管 NPN High Frequency

  • RoHS：

    否

  • 制造商：

    NXP Semiconductors

  • 配置：

    Single

  • 晶體管極性：

    NPN

  • 最大工作頻率：

    7000 MHz 集電極—發(fā)射極最大電壓

  • VCEO：

    15 V 發(fā)射極 - 基極電壓

  • VEBO：

    2 V

  • 集電極連續(xù)電流：

    0.15 A

  • 功率耗散：

    1000 mW 直流集電極/Base Gain hfe

  • 最大工作溫度：

    + 150 C

  • 封裝/箱體：

    SOT-223

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
SOT-363/SOT-323-6
8600
新進庫存/原裝
 詢價
NEC
17+
SOT-363
6200
100%原裝正品現(xiàn)貨
 詢價
NEC
16+
SOT-363
10000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
NEC
23+
SOT-363
7750
全新原裝優(yōu)勢
 詢價
NEC
24+
SOT-363
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
23+
SOT-363
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
NEC
22+23+
SOT-363
43427
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
NEC
21+
SOT-363
6000
絕對原裝現(xiàn)貨
 詢價
CEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
NEC
2022
SOT-363 / SOT-323-6
8600
全新原裝現(xiàn)貨熱賣
 詢價
更多UPA801T供應(yīng)商 更新時間2024-10-25 11:18:00

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