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TP65H050G4QS中文資料TRANSPHORM數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
TP65H050G4QS規(guī)格書(shū)詳情
Description
The TP65H050G4QS 650V, 50 mΩ gallium nitride (GaN) FET
is a normally-off device using Transphorm’s Gen IV platform.
It combines a state-of-the-art high voltage GaN HEMT with
low voltage silicon MOSFET to offer superior reliability and
performance.
The Gen IV SuperGaN? platform uses advanced epi and
patented design technologies to simplify manufacturability
while improving efficiency over silicon via lower gate charge,
output capacitance, crossover loss, and reverse recovery
charge.
Features
? JEDEC qualified GaN technology
? Dynamic RDS(on)eff production tested
? Robust design, defined by
— Wide gate safety margin
— Transient over-voltage capability
? Enhanced inrush current capability
? Very low QRR
? Reduced crossover loss
Applications
? Datacom
? Broad industrial
? PV inverter
? Servo motor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Transphorm |
23+ |
TO2473 |
6000 |
誠(chéng)信服務(wù)，絕對(duì)原裝原盤(pán) |
詢價(jià) | ||
HARRIS |
23+ |
SOP |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售! |
詢價(jià) | ||
HARRIS |
24+ |
SOP |
2500 |
自己現(xiàn)貨 |
詢價(jià) | ||
Transphorm |
2022+ |
TO-247-3 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
TRANSPHORM |
19+ |
TO247 |
1100 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
HARRIS |
1998 |
SOP |
472 |
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢 |
詢價(jià) | ||
MOT |
24+ |
DIP |
3500 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
IOT |
2023+ |
DIP-28 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
ROCPU Switches(臺(tái)普) |
21+ |
SMD |
35000 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方 |
詢價(jià) | ||
TRANSPHORM |
23+ |
TO247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
