TP65H300G4JSGB-TR中文資料TRANSPHORM數(shù)據(jù)手冊PDF規(guī)格書

Description

The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN)

FET is a normally-off device using Transphorm’s Gen IV

platform. It combines a state-of-the-art high voltage GaN

HEMT with a low voltage silicon MOSFET to offer superior

reliability and performance.

The Gen IV SuperGaN? platform uses advanced epi and

patented design technologies to simplify manufacturability

while improving efficiency over silicon via lower gate charge,

output capacitance, crossover loss, and reverse recovery

Features

? Gen IV technology

? JEDEC-qualified GaN technology

? Dynamic RDS(on)eff production tested

? Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

? Very low QRR

? Reduced crossover loss

? RoHS compliant and Halogen-free packaging

Applications

? Consumer

? Power adapters

? Low power SMPS

? Lighting

charge.