TP65H070LDG-TR中文資料TRANSPHORM數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN)

FET are normally-off devices. They combine state-of-the-art

high voltage GaN HEMT and low voltage silicon MOSFET

technologies—offering superior reliability and performance.

Features

? JEDEC qualified GaN technology

? Dynamic RDS(on)eff production tested

? Robust design, defined by

— Intrinsic lifetime tests

— Wide gate safety margin

— Transient over-voltage capability

? Very low QRR

? Reduced crossover loss

? RoHS compliant and Halogen-free packaging

Benefits

? Improves efficiency/operation frequencies over Si

? Enables AC-DC bridgeless totem-pole PFC designs

— Increased power density

— Reduced system size and weight

— Overall lower system cost

? Easy to drive with commonly-used gate drivers

? GSD pin layout improves high speed design

Applications

? Datacom

? Broad industrial

? PV inverter

? Servo motor