首頁 >TPS7H1111HBL/EM>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
TPS7H1111HBL/EM | TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | |
TPS7H1111HBL/EM | TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TITexas Instruments 德州儀器美國德州儀器公司 | TI | |
TPS7H1111HBL/EM | Marking：TPS7H1111HBL；Package：CFP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | |
TPS7H1111HBL/EM | Marking：TPS7H1111HBL；Package：CFP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | |
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator 1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear | TI1Texas Instruments 德州儀器 | TI1 |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
NA |
4198 |
專注TI原裝正品代理分銷,認(rèn)準(zhǔn)水星電子 |
詢價(jià) | ||
3000 |
原裝現(xiàn)貨 |
詢價(jià) | |||||
TI德州儀器 |
22+ |
24000 |
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu) |
詢價(jià) | |||
TI/德州 |
2018+ |
SOIC |
32500 |
VSSOP |
詢價(jià) | ||
N/A |
99 |
詢價(jià) | |||||
TI |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價(jià) | ||
TI |
24+ |
開發(fā)板 |
20000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
TI/德州儀器 |
23+ |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | |||
TI/德州儀器 |
23+ |
8355 |
只做原裝現(xiàn)貨/實(shí)單可談/支持含稅拆樣 |
詢價(jià) | |||
TI |
16+ |
原廠封裝 |
30 |
宇航IC只做原裝假一罰十 |
詢價(jià) |
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