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TPS7H6003-SP

TPS7H6003-SP Radiation-Hardness-Assured 200-V, 1.3-A, 2.5-A, Half Bridge GaN FET Gate Driver

1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventtransient(SET),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneto linearenergytransfer(LET)=75MeV-cm2/mg –Single-eventtr

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H6003-SP

TPS7H60x3-SP Radiation-Hardness-Assured 1.3-A, 2.5-A, Half Bridge GaN FET Gate Drivers

1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtran

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H6003-SP

TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers

1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H6003-SP_V01

TPS7H60x3-SP Radiation-Hardness-Assured 1.3-A, 2.5-A, Half Bridge GaN FET Gate Drivers

1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtran

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H6003-SP_V02

TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers

1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H6003HBX/EM

TPS7H60x3-SPRadiation-Hardness-Assured1.3A,2.5A,HalfBridgeGaNFETGateDrivers

1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H6003HBX/EM

TPS7H60x3-SPRadiation-Hardness-Assured1.3-A,2.5-A,HalfBridgeGaNFETGateDrivers

1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtran

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

供應商型號品牌批號封裝庫存備注價格
AVX
8000
全新原裝現(xiàn)貨 樣品可售
 詢價
NA
23+
NA
26094
10年以上分銷經(jīng)驗原裝進口正品,做服務型企業(yè)
 詢價
80000
詢價
6000
詢價
TI(德州儀器)
21+
USIP
10000
低于市場價,實單必成,QQ1562321770
 詢價
23+
NA
6800
原裝正品,力挺實單
 詢價
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
 詢價
TI/德州
2018+
VQFN
32500
德州代理承諾銷售原裝正品公司可開正規(guī)17%增值稅票
 詢價
N/A
99
詢價
TexasInstruments
18+
ICCONVBUCK/BOOST1.8V32VQ
7500
公司原裝現(xiàn)貨/歡迎來電咨詢!
 詢價
更多TPS7H6003-SP供應商 更新時間2024-11-18 16:40:00

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