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STD10P6F6

P-channel60V,0.15廓typ.,10ASTripFET??VIDeepGATE??PowerMOSFETinDPAKandTO-220packages

Description ThesedevicesareP-channelPowerMOSFETsdevelopedusingtheSTripFET?F6technology,withanewtrenchgatestructure.TheresultingPowerMOSFETsexhibitverylowRDS(on)inallpackages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lo

STMICROELECTRONICSSTMicroelectronics

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STD10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STMICROELECTRONICSSTMicroelectronics

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STF10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP10P6F6

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STP10P6F6

P-channel60V,0.15廓typ.,10ASTripFET??VIDeepGATE??PowerMOSFETinDPAKandTO-220packages

Description ThesedevicesareP-channelPowerMOSFETsdevelopedusingtheSTripFET?F6technology,withanewtrenchgatestructure.TheresultingPowerMOSFETsexhibitverylowRDS(on)inallpackages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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24+
TO-252
5000
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詢(xún)價(jià)
24+
N/A
62000
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TECH PUBLIC(臺(tái)舟)
23+
TO-252
2851
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET)
詢(xún)價(jià)
TI/德州儀器
2023+
WQFN-16
11000
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站
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TI/德州儀器
23+
11200
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TI
2023
SOT-23-5
8195
原廠(chǎng)代理渠道,正品保障
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Excelitas
2020+
N/A
17
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22+
NA
3794
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NA
2408
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AVX
2021+
SMD
100500
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更多TPSTD10P6F6供應(yīng)商 更新時(shí)間2025-1-11 8:01:00